Hot plate and method of manufacturing the same
Disclosed are a hot plate and a method of manufacturing the same. The method includes the steps of preparing a first barrier layer, laminating a first heat transfer layer on the first barrier layer, and laminating a second barrier layer on the first heat transfer layer. The first barrier layer or the second barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers. The hot plate includes a first barrier layer, a first heat transfer layer on the first barrier layer, and a second barrier layer on the first heat transfer layer. The first barrier layer or the second barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers.
1. A hot plate comprising:
a first barrier layer;
a first heat transfer layer on the first barrier layer;
a second barrier layer on the first heat transfer layer,
a second heat transfer layer on the second barrier layer; and
a third barrier layer on the second heat transfer layer;
wherein the first barrier layer, the second barrier layer, or the third barrier layer includes a plurality of first sub-nano-barrier layers and a plurality of second sub-nano-barrier layers;
wherein the first heat transfer layer or the second heat transfer layer includes a silicon carbide (SiC) layer or a hafnium nitride (HfN) layer;
wherein the first and second barrier layers are in direct physical contact with the first heat transfer layer;
wherein the second and third barrier layers are in direct physical contact with the second heat transfer layer;
wherein each first sub-nano-barrier layer is in direct physical contact with at least one of the second sub-nano-barrier layers and each second sub-nano-barrier layer is in direct physical contact with at lease one of the first sub-nano-barrier layers; and
wherein each first sub-nano-barrier layer and each second sub-nano-barrier layer has nanoscale size.
2. The hot plate of claim 1 , wherein the first sub-nano-barrier layer or the second sub-nano-barrier layer includes a tantalum carbide (TaC) layer, a hafnium nitride (HfN) layer, an aluminum nitride (AlN) layer, a titanium nitride (TiN) layer, or a tantalum nitride (TaN) layer.
3. The hot plate of claim 1 , wherein the first heat transfer layer or the second heat transfer layer has a thickness in a range of about 500 nm to about 500 μm.
4. The hot plate of claim 1 , wherein the first barrier layer, the second barrier layer, or the third barrier layer has a thickness in a range of about 500 nm to about 100 μm.
5. The hot plate of claim 1 , wherein the first sub-nano-barrier layer has a thickness in a range of about 2 nm to about 50 nm.
6. The hot plate of claim 1 , wherein the second sub-nano-barrier layer has a thickness in a range of about 2 nm to about 50 nm.
7. The hot plate of claim 1 , wherein the first barrier layer, the second barrier layer, or the third barrier layer has a thermal conductivity of about 10 W/mK or less.
8. The hot plate of claim 1 , wherein the heat transfer layer has a thermal conductivity of about 100 W/mK or more.
9. The hot plate of claim 1 , wherein a top surface of the hot plate is coated with silicon carbide.
10. The hot plate of claim 1 , wherein a thickness of the first barrier layer is at least 30% of a thickness of the first heat transfer layer.
11. The hot plate of claim 1 , wherein a thickness of the second barrier layer is at least 30% of a thickness of the first heat transfer layer.