IP Library › Granted Patent US 9,825,070
Granted Patent B2
US 9,825,070 · App. 14/356,004 · Granted Nov 21, 2017

LCD display with light sensor having a light blocking layer

Inventors: Zhenyu Xie (Beijing, CN); Shaoying Xu (Beijing, CN); Tiansheng Li (Beijing, CN); Changjiang Yan (Beijing, CN)
Assignees: BOE TECHNOLOGY GROUP CO., LTD.; BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
H01L27/1443G02F1/13318H01L27/1446H01L29/78633H01L29/78678H01L31/0203H01L31/02164H01L31/202G02F1/133512G02F2001/133388
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Quick Facts
Patent No.
US 9,825,070
App. No.
14/356,004
Granted
Nov 21, 2017
Kind
B2
Abstract

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.

Claims (24)

1. An array substrate comprising a display area and a non-display area, wherein the non-display area comprises at least one light sensor, and each light sensor comprises:

a light blocking layer on a substrate for blocking light emitted from a backlight source;

an insulating layer on the light blocking layer;

an amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light;

an input electrode and an output electrode on the amorphous silicon layer and not contacting each other, wherein the input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel; the output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit,

wherein the light blocking layer and a gate electrode of the TFT contained in the display area are in a same layer and of a same material,

wherein the array substrate further comprises a voltage source configured to supply a voltage greater than a turning on voltage of the light sensor to the input electrode; and

wherein the array substrate further comprises a voltage source configured to supply a voltage smaller than a pinch-off voltage of the light sensor and close to the same as a threshold voltage of the light sensor to the light blocking layer.

2. The array substrate of claim 1 , wherein an area covered by the light blocking layer is greater than an area covered by the amorphous silicon layer.

3. The array substrate of claim 2 , wherein the display area comprises a thin film transistor (TFT) for driving each pixel;

the insulating layer and a gate insulating layer of the TFT are a same structure layer;

the amorphous silicon layer and an active layer of the TFT are in a same layer and of a same material;

the input electrode and a source electrode of the TFT are in a same layer and of a same material;

the output electrode and a drain electrode of the TFT are in a same layer and of a same material.

4. The array substrate of claim 2 , wherein the light sensor further comprises a protection layer on the input electrode and the output electrode.

5. The array substrate of claim 1 , wherein the display area comprises a thin film transistor (TFT) for driving each pixel;

the insulating layer and a gate insulating layer of the TFT are a same structure layer;

the amorphous silicon layer and an active layer of the TFT are in a same layer and of a same material;

the input electrode and a source electrode of the TFT are in a same layer and of a same material;

the output electrode and a drain electrode of the TFT are in a same layer and of a same material.

6. The array substrate of claim 1 , wherein the light sensor further comprises a protection layer on the input electrode and the output electrode.

7. The array substrate of claim 6 , wherein the protection layer and a passivation layer in the display area are a same structure layer.

8. A display device comprising the array substrate of claim 1 .

9. The display device of claim 8 , wherein a window that allows external light to pass is disposed in the display device at a location corresponding to the light sensor, and the amorphous silicon layer in the light sensor is configured to sense external light through the window.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2014
From: XIE, ZHENYU; XU, SHAOYING; LI, TIANSHENG; YAN, CHANGJIANG
To: BOE TECHNOLOGY GROUP CO., LTD.; BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 032811/0777 →
Priority Claims (1)
CN 2013 1 0105416 · Mar 28, 2013 · national
Continuity (1)
Related Publication 20150179689A1 · Jun 25, 2015