Gas barrier film and electronic apparatus
A gas barrier film ( 10 ) that comprises a gas barrier layer ( 14 ), which is obtained by irradiating a layer that contains a polysilazane with vacuum ultraviolet light, on a base ( 11 ) is formed to contain a compound (A) that satisfies all of the conditions (a), (b) and (c) described below in an amount within the range from 1% by mass to 40% by mass (inclusive) relative to the total mass of the gas barrier layer. (a) The compound (A) has an Si—O bond and an organic group that is directly bonded to Si. (b) The compound (A) has an Si—H group or an Si—OH group. (c) The compound (A) has a molecular weight of from 90 to 1,200 (inclusive).
1. A gas barrier film comprising:
a substrate; and
a gas barrier layer disposed over the substrate, the gas barrier layer being formed by irradiating a layer containing polysilazane and a compound A with vacuum ultraviolet rays,
wherein
the gas barrier layer contains the compound A in an amount of 5 mass % or more and 30 mass % or less with respect to the entire gas barrier layer, the compound A satisfying all of following conditions (a), (b), and (c):
(a) the compound A has an Si—O bond and an organic group which is any one of a methyl group, an ethyl group, and a phenyl group directly bonded to Si;
(b) the compound A has an Si—H group or an Si—OH group; and
(c) the compound A has a molecular weight of 90 or more and 1200 or less,
the compound A has a structure represented by Formula (1):
wherein R represents the organic group, and X represents H or OH, and
the compound A has an Si—O—Si bond.
2. The gas barrier film according to claim 1 , wherein the compound A has a cyclic or cage structure including the Si—O—Si bond.
3. The gas barrier film according to claim 1 , wherein the organic group is any one of a methyl group, an ethyl group, and a phenyl group.
4. The gas barrier film according to claim 1 , wherein the substrate has a surface roughness Rz of 200 nm or more and 500 nm or less.
5. The gas barrier film according to claim 1 , further comprising:
at least one intermediate layer disposed between the substrate and the gas barrier layer,
wherein a surface, in contact with the gas barrier layer, of the intermediate layer has a surface roughness Rz of 200 nm or more and 500 nm or less.
6. The gas barrier film according claim 1 , wherein the gas barrier layer has a thickness of at least 250 nm.
7. An electronic apparatus comprising:
the gas barrier film according to claim 1 ; and
an electronic device sealed with the gas barrier film.