Radiation detector system and method of manufacture
View Patent ↗A high electric field radiation detector includes a first and second electrode, a radiation detector layer and a soft polvmer layer. The soft polvmer detector layer located below the radiation detector layer and in contact with at least the first electrode.
1. A high electric field radiation detector comprising:
a first electrode;
a second electrode;
a radiation detecting layer; and
an insulating soft polymer layer below the radiation detecting layer and in contact with at least the first electrode.
2. The radiation detector of claim 1 , wherein the radiation detector is in a vertical configuration; and
wherein the insulating soft polymer layer is deposited on the first electrode and the second electrode is deposited above the radiation detecting layer.
3. The radiation detector of claim 1 , wherein the radiation detector is in a lateral configuration; and
wherein the insulating soft polymer layer is deposited on the first electrode and the second electrode.
4. The radiation detector of claim 1 , wherein the radiation detecting layer is selected from any one of amorphous selenium, amorphous silicon, mercuric iodide, lead oxide, and an organic semiconductor.
5. The radiation detector of claim 1 , wherein the insulating soft polymer layer comprises a polyimide material.
6. The radiation detector of claim 1 further comprising a blocking layer above the radiation detecting layer.
7. The radiation detector of claim 1 further comprising a substrate layer connected to the first electrode on a surface opposite the insulating soft polymer layer.
8. The radiation detector of claim 7 wherein the substrate layer is selected from any one of a thin film transistor array, a complementary metal-oxide semiconductor transistor array, a plastic layer, a steel layer, and a glass layer.
9. The radiation detector of claim 8 further comprising readout electronics connected to the substrate layer.
10. The radiation detector of claim 1 , wherein said first electrode and said second electrode are spaced laterally apart; said insulating soft polymer layer in contact with said first electrode and said second electrode; and wherein said radiation detecting layer is not in contact with said first electrode and said second electrode.
11. A method of manufacturing a radiation detector, the method comprising:
obtaining a radiation detecting layer;
depositing an insulating soft polymer layer on at least one side of the radiation detecting layer;
depositing a on one side of the insulating soft polymer layer; and
depositing a second electrode on the radiation detecting layer on a side opposite of the insulating soft polymer layer.
12. The method of claim 11 , wherein depositing the radiation detecting layer comprises depositing any one of amorphous selenium, amorphous silicon, mercuric iodide, lead oxide, and an organic semiconductor on the polymer layer.
13. The method of claim 11 , wherein depositing the insulating soft polymer layer comprises depositing a polyimide material on the first electrode.
14. The method of claim 11 , wherein depositing the insulating soft polymer layer comprises spin coating and baking the insulating soft polymer on the first electrode.
15. The method of claim 11 , wherein depositing the second electrode above the radiation detecting layer comprises:
evaporating or spin coating a blocking layer above the radiation detecting layer; and
depositing the second electrode on the blocking layer.
16. The method of claim 11 further comprising:
connecting the first electrode to a substrate layer; and
connecting the substrate layer to readout electronics.
17. The method of claim 11 further comprising operating under a high electric field.
18. A method of manufacturing a radiation detector, the method comprising:
obtaining a radiation detecting layer;
depositing an insulating soft polymer layer on one side of the radiation detecting layer; and
depositing a first electrode and a second electrode, the first and second electrode spaced laterally apart on the insulating soft polymer layer and the first and second electrodes not in contact with the radiation detecting layer.
19. The method of claim 18 , wherein depositing the radiation detecting layer comprises depositing any one of amorphous selenium, amorphous silicon, mercuric iodide, lead oxide, and an organic semiconductor on the polymer layer.
20. The method of claim 18 , wherein depositing the insulating soft polymer layer comprises depositing a polyimide material on the first electrode and the second electrode.
21. The method of claim 18 , wherein depositing the insulating soft polymer layer comprises spin coating and baking the insulating soft polymer on the first electrode and the second electrode.
22. The method of claim 18 further comprising:
evaporating or spin coating a blocking layer above the radiation detecting layer.
23. The method of claim 18 further comprising:
connecting the first electrode and the second electrode to a substrate layer; and
connecting the substrate layer to readout electronics.
24. The method of claim 18 further comprising operating under a high electric field.
25. A high electric field radiation detector comprising:
a first electrode;
a second electrode;
a radiation detecting layer; and
an insulating soft polymer layer in contact with the radiation detecting layer and in contact with at least the first electrode.