IP Library Granted Patent US 9,250,210
Granted Patent B2
US 9,250,210 · App. 14/366,912 · Granted Feb 2, 2016

Gas sensor

Inventors: Isao Shimoyama (Tokyo, JP); Kiyoshi Matsumoto (Tokyo, JP); Yusuke Takei (Tokyo, JP); Hidetoshi Takahashi (Tokyo, JP); Noboru Kiga (Tokyo, JP); Masahito Honda (Tokyo, JP)
Assignees: The University of Tokyo; Omron Corporation
G01N27/48G01N27/4141G01N27/4146G01N33/004G01N33/0054H01L51/0048H01L51/0508
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Quick Facts
Patent No.
US 9,250,210
App. No.
14/366,912
Granted
Feb 2, 2016
Kind
B2
Abstract

A gas sensor that can enhance gas detection sensitivity more than the conventional sensors with a simple configuration is proposed. An electric double layer including a gate insulating layer is formed in an ionic liquid (IL), a change of a state of the gate insulating layer in the ionic liquid (IL) that occurs by absorbing a gas is directly reflected in a source-drain current (I sd ) that flows in a carbon nanotube ( 8 ). Therefore, the gas detection sensitivity can be enhanced more than in the conventional sensors. Further, since the ionic liquid (IL) can be simply provided on a substrate ( 2 ) to be in contact with the carbon nanotube ( 8 ) and a gate electrode ( 7 ), the configuration that chemically modifies a surface of the carbon nanotube with a plurality of polymers as in the conventional gas sensors is not needed, and the configuration can be simplified correspondingly.

Claims (14)

1. A gas sensor that detects a gas that is a target of detection, comprising:

a carbon nanotube provided between a source electrode and a drain electrode on a substrate, and a source-drain current flows therein; and

a gas absorbing liquid disposed to cover the carbon nanotube,

wherein the gas is detected based on a change of the source-drain current in the carbon nanotube caused by absorbing the gas in the gas absorbing liquid,

wherein the gas absorbing liquid is in contact with the carbon nanotube and a gate electrode on the substrate to become a gate insulating layer, a state of the gate insulating layer changes by absorbing the gas, and the gas is detected based on a change of the source-drain current that occurs in response to the state of the gate insulating layer,

wherein the gate electrode is configured by a first gate electrode portion and a second gate electrode portion, and the carbon nanotube is disposed between the first gate electrode portion and the second gate electrode portion, and the gas absorbing liquid is disposed to be in contact with the first gate electrode portion and the second gate electrode portion, and

wherein the gas absorbing liquid is held in a gap formed between the first gate electrode portion and the second gate electrode portion.

2. The gas sensor according to claim 1 ,

wherein holding means covering the gas absorbing liquid, and holding the gas absorbing liquid on the substrate is provided.

3. The gas sensor according to claim 1 ,

wherein the gas is detected based on a change of a gate voltage of the gate electrode that changes in response to the source-drain current.

4. The gas sensor according to any claim 1 ,

wherein the gas absorbing liquid is an ionic liquid.

5. The gas sensor according to claim 1 , wherein the gas absorbing liquid is a hydroxide aqueous solution of an alkali metal and an alkaline earth metal.

Assignments (3)
DE-MERGER Recorded May 20, 2022
From: OMRON CORPORATION
To: SHIGA SEMICONDUCTOR CO., LTD.
Reel/Frame 060132/0451 →
CHANGE OF NAME AND ADDRESS Recorded May 20, 2022
From: SHIGA SEMICONDUCTOR CO., LTD.
To: MMI SEMICONDUCTOR CO., LTD.
Reel/Frame 060132/0466 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2014
From: SHIMOYAMA, ISAO; MATSUMOTO, KIYOSHI; TAKEI, YUSUKE; TAKAHASHI, HIDETOSHI; KIGA, NOBORU; HONDA, MASAHITO
To: THE UNIVERSITY OF TOKYO; OMRON CORPORATION
Reel/Frame 033151/0340 →
Priority Claims (1)
JP 2012-004963 · Jan 13, 2012 · national
Continuity (1)
Related Publication 20140346042A1 · Nov 27, 2014