Method for producing a MOS stack on a diamond substrate
The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.
1. A method of manufacturing a component comprising a conductive gate insulated from a doped single-crystal diamond semiconductor substrate by an insulating region, comprising the steps of:
a) oxygenating the surface of the doped single-crystal diamond semiconductor substrate to replace hydrogen surface terminations of the substrate with oxygen surface terminations; and
b) forming the insulating region at the surface of the oxygen-terminated doped single-crystal diamond semiconductor substrate by atomic layer deposition.
2. The method of claim 1 , wherein at step a), the substrate is placed in an enclosure containing dioxygen at a pressure lower than the atmospheric pressure, and is irradiated with ultraviolet light.
3. The method of claim 1 , wherein the insulating region is made of aluminum oxide.
4. The method of claim 3 , wherein, at step b), the forming of each atom monolayer of aluminum oxide comprises a phase of placing into contact the component surface with an atmosphere comprising trimethyl-aluminum, followed by a phase of placing into contact the component surface with an atmosphere comprising water vapor.
5. The method of claim 1 , wherein the gate is made of metal.
6. The method of claim 1 , wherein the gate is made of aluminum.
7. The method of claim 1 , wherein the substrate comprises an upper epitaxial layer made of P-type doped single-crystal diamond.
8. A component capable of being obtained by the manufacturing method of claim 1 .
9. A method of manufacturing a component comprising a conductive gate insulated from a single-crystal diamond semiconductor substrate by an insulating region, comprising the steps of:
a) oxygenating the surface of the single-crystal diamond semiconductor substrate to replace hydrogen surface terminations of the substrate with oxygen surface terminations; and
b) forming the insulating region at he surface of the oxygen-terminated single-crystal diamond semiconductor substrate by atomic layer deposition.