Low temperature arc ion plating coating

1. Coating method for arc coating or arc ion plating coating of substrates in a vacuum chamber in which a coating plasma discharge is generated using an arc evaporator in such a manner that a target placed at the arc evaporator and consisting of solid material functions as a cathode and is evaporated, during arc evaporation a motion of a cathode spot on a solid material surface of the solid material is accelerated using a magnetic field having predetermined magnetic field intensities for avoiding ejection of a large amount of macro-particles or droplets from the solid material surface, negative charged particles resulted from the arc evaporation exit the solid material surface of the cathode and flow to an anode, wherein at least part of the anode is separate from walls of the vacuum chamber, characterized by

an additional increment of an electric potential of the coating plasma caused by using said magnetic field intensities is prevented

by placing the anode and the cathode such that a portion of the anode overlapping a lateral side surface of the cathode is in a line of sight of the lateral side surface of the cathode, and

by directing magnetic field lines of the magnetic field or at least a majority of the magnetic field lines directly from the solid material surface of the cathode to a surface of the anode along paths that are free of other components and wherein a position and geometry of the anode in relation to the cathode is chosen in such a manner that the magnetic field lines and electric field lines are parallel at the surface of the anode,

so that a prominent spiral motion of the negative charged particles by flowing from the cathode to the anode is avoided and in doing so a lower increment of a substrate temperature during coating is attained.

2. Method according to claim 1 , characterized by the intensity of the magnetic field is a high magnetic field intensity which is about 40 Gauss to 500 Gauss.

3. Method according to claim 1 , characterized by a position and geometry of the anode in relation to the cathode are chosen in such a manner that the magnetic field lines meet the surface of the anode substantially perpendicularly or at least forming an angle of at least 45° in relation to the surface of the anode.

4. Method according to claim 1 , characterized by the substrate temperature is between 100° C. and 300° C. or lower.

5. Method according to claim 1 , characterized by the target comprises aluminium.

6. Method according to claim 1 , characterized by the target comprises titanium and/or chromium.

7. Method according to claim 1 , characterized by the intensity of the magnetic field is about 60 Gauss.

8. Method according to claim 1 , characterized by a heat energy of the plasma is diminished by a factor greater than 10 times.

9. Method according to claim 1 , characterized by a diminished cathode voltage.

10. Method according to claim 1 , characterized by a bias current during coating is lower in comparison with a coating process in which identical coating parameters are used and the anode further includes the walls of the vacuum chamber.

11. Coating method for arc coating or arc ion plating coating of substrates in a vacuum chamber in which a coating plasma discharge is generated using an arc evaporator in such a manner that a target placed at the arc evaporator and consisting of solid material functions as a cathode and is evaporated, during arc evaporation a motion of a cathode spot on a solid material surface of the solid material is accelerated using a magnetic field having predetermined magnetic field intensities for avoiding ejection of a large amount of macro-particles or droplets from the solid material surface, negative charged particles resulted from the arc evaporation exit the solid material surface of the cathode and flow to an anode, wherein at least part of the anode is separate from walls of the vacuum chamber, characterized by

an additional increment of an electric potential of the coating plasma caused by using said magnetic field intensities is prevented

by placing the anode and the cathode such that a space between a portion of the anode overlapping a lateral side surface of the cathode and the lateral side surface of the cathode is unobstructed, and

by directing magnetic field lines of the magnetic field or at least a majority of the magnetic field lines directly from the solid material surface of the cathode to a surface of the anode along paths that are free of other components and wherein a position and geometry of the anode in relation to the cathode is chosen in such a manner that the magnetic field lines and electric field lines are parallel at the surface of the anode,

so that a prominent spiral motion of the negative charged particles by flowing from the cathode to the anode is avoided and in doing so a lower increment of a substrate temperature during coating is attained.

12. Method according to claim 11 , characterized by the intensity of the magnetic field is a high magnetic field intensity which is about 40 Gauss to 500 Gauss.

13. Method according to claim 11 , characterized by a position and geometry of the anode in relation to the cathode are chosen in such a manner that the magnetic field lines meet the surface of the anode substantially perpendicularly or at least forming an angle of at least 45° in relation to the surface of the anode.

14. Method according to claim 11 , characterized by the substrate temperature is between 100° C. and 300° C. or lower.

15. Method according to claim 11 , characterized by the target comprises one of aluminium, titanium, and chromium.

16. Method according to claim 11 , characterized by the intensity of the magnetic field is about 60 Gauss.

17. Method according to claim 11 , characterized by a diminished cathode voltage.

18. Method according to claim 11 , characterized by a bias current during coating is lower in comparison with a coating process in which identical coating parameters are used and the anode further includes walls of the vacuum chamber.