Etching liquid composition and etching method
The etching liquid composition of the present invention contains a ferric ion component; a hydrogen chloride component; and a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms: wherein R 1 and R 3 are each independently a hydrogen atom or a straight chain or branched chain alkyl group having 1 to 4 carbon atoms, R 2 is a straight chain or branched chain alkylene group having 1 to 4 carbon atoms, and n is a number between 1 and 3.
1. An etching liquid composition which is used to collectively etch a multilayer film formed of an indium oxide-based coating film and a metal-based coating film characterized in that the etching liquid composition is formed of an aqueous solution that contains:
(A) a ferric ion component;
(B) a hydrogen chloride component; and
(C) a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (1) below and a straight chain or branched chain alcohol having 1 to 4 carbon atoms:
wherein R 1 and R 3 are each independently a hydrogen atom or a straight chain or branched chain alkyl group having 1 to 4 carbon atoms, R 2 is a straight chain or branched chain alkylene group having 1 to 4 carbon atoms, and n is a number between 1 and 3.
2. The etching liquid composition according to claim 1 , wherein the compound represented by general formula (1) is a component that is at least one type of compound selected from the group consisting of a compound represented by general formula (2) below and a branched chain alcohol having 3 to 4 carbon atoms:
wherein R 1 and R 3 are each independently a hydrogen atom or a straight chain or branched chain alkyl group having 1 to 4 carbon atoms, and n is a number between 1 and 3.
3. The etching liquid composition according to claim 2 , wherein the component (C) contains at least dipropylene glycol monomethyl ether or isopropanol.
4. The etching liquid composition according to claim 2 , which further contains one or more types of additive selected from the group consisting of stabilizers, solubilizing agents for components (A), (B) or (C), anti-foaming agents, pH adjusting agents, specific gravity adjusting agents, viscosity modifiers, wettability improving agents, chelating agents, oxidizing agents, reducing agents and surfactants.
5. An etching method for collectively etching a multilayer film formed of an indium oxide-based coating film and a metal-based coating film, wherein the etching liquid composition described in claim 2 is used as an etching liquid composition.
6. The etching liquid composition according to claim 1 , wherein the component (C) contains at least dipropylene glycol monomethyl ether or isopropanol.
7. The etching liquid composition according to claim 6 , which further contains one or more types of additive selected from the group consisting of stabilizers, solubilizing agents for components (A), (B) or (C), anti-foaming agents, pH adjusting agents, specific gravity adjusting agents, viscosity modifiers, wettability improving agents, chelating agents, oxidizing agents, reducing agents and surfactants.
8. An etching method for collectively etching a multilayer film formed of an indium oxide-based coating film and a metal-based coating film, wherein the etching liquid composition described in claim 6 is used as an etching liquid composition.
9. The etching liquid composition according to claim 1 , which further contains one or more types of additive selected from the group consisting of stabilizers, solubilizing agents for components (A), (B) or (C), anti-foaming agents, pH adjusting agents, specific gravity adjusting agents, viscosity modifiers, wettability improving agents, chelating agents, oxidizing agents, reducing agents and surfactants.
10. The etching liquid composition according to claim 9 , wherein the additive is a reducing agent.
11. An etching method for collectively etching a multilayer film formed of an indium oxide-based coating film and a metal-based coating film, wherein the etching liquid composition described in claim 10 is used as an etching liquid composition.
12. An etching method for collectively etching a multilayer film formed of an indium oxide-based coating film and a metal-based coating film, wherein the etching liquid composition described in claim 9 is used as an etching liquid composition.
13. An etching method for collectively etching a multilayer film formed of an indium oxide-based coating film and a metal-based coating film, wherein the etching liquid composition described in claim 1 is used as an etching liquid composition.
14. The etching method according to claim 13 , wherein the indium oxide-based coating film is a film having one or more layers selected from the group consisting of an indium oxide coating film, an indium-tin oxide coating film and an indium-zinc oxide coating film.
15. The etching method according to claim 13 , wherein the metal-based coating film is a film having one or more layers formed of a coating film of a metal selected from the group consisting of copper, nickel, titanium, chromium, silver, molybdenum, aluminum, platinum and palladium and/or an alloy coating film containing two or more metals selected from the group consisting of copper, nickel, titanium, chromium, silver, molybdenum, aluminum, platinum and palladium.
16. The etching method according to claim 14 , wherein the metal-based coating film is a film having one or more layers formed of a coating film of a metal selected from the group consisting of copper, nickel, titanium, chromium, silver, molybdenum, aluminum, platinum and palladium and/or an alloy coating film containing two or more metals selected from the group consisting of copper, nickel, titanium, chromium, silver, molybdenum, aluminum, platinum and palladium.