Sputtering target for magnetic recording film
View Patent ↗Provided is a sputtering target for a magnetic recording film. The sputtering target has a peak intensity ratio (I G /I D ) of a G-band to a D-band of 5.0 or more in Raman scattering spectrometry. It is an object of the present invention to produce a magnetic thin film having a granular structure without using a high cost co-sputtering apparatus and to provide a sputtering target, in particular, an Fe—Pt-based sputtering target for a magnetic recording film, where carbon particles are dispersed in the target. Since carbon is a material which is not susceptible to being sintered and is susceptible to form aggregates, a conventional carbon-containing sputtering target has the problem that detachment of carbon lumps occurs during sputtering to result in generation of a large number of particles on the film. The present invention also addresses the problem of providing a high density sputtering target that can overcome the disadvantages.
1. A sputtering target having a sintered body for a magnetic recording film comprising:
a metal matrix having a composition comprising Pt in an amount of 5 mol % or more and 60 mol % or less and a balance of Fe; and
carbon particles in a form of flaked graphite dispersed in the metal matrix in an amount of 10 mol % or more and 70 mol % or less, and having a peak intensity ratio (I G /I D ) of 5.0 or more for a peak intensity of the G-band, I G , and a peak intensity of the D-band, I D , in Raman scattering spectrometry,
wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of particles of at least one oxide additive selected from the group consisting of SiO 2 ,Cr 2 O 3 , CoO, Ta 2 O 5 , B 2 O 3 ,MgO, and Co 3 O 4 .
2. The sputtering target for a magnetic recording film according to claim 1 , wherein the sputtering target has a relative density of 90% or more.
3. The sputtering target for a magnetic recording film according to claim 2 , wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of at least one additional element selected from the group consisting of B, Ru, Ag, Au, and Cu.
4. The sputtering target for a magnetic recording film according to claim 1 , wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of at least one additional element selected from the group consisting of B, Ru, Ag, Au, and Cu.
5. The sputtering target for a magnetic recording film according to claim 1 , wherein said peak intensity ratio (I G /I D ) of the peak intensity of the G-band, I G , and the peak intensity of the D-band, I D , in Raman scattering spectrometry is 5.02 or more.
6. A sputtering target for producing a magnetic recording film, comprising a sintered body comprising a metal matrix and carbon particles in a form of flaked graphite dispersed in said metal matrix and having a peak intensity ratio (I G /I D ) for a peak intensity of the G-band, I G , and a peak intensity of the D-band, I D , of 5.0 or more in Raman scattering spectrometry, said metal matrix consisting of Fe and 5 mol % or more and 60 mol % or less of Pt, and a content of said carbon particles in said sintered body being 10 mol % or more and 70 mol %, wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of particles of at least one oxide additive selected from the group consisting of SiO 2 ,Cr 2 O 3 , CoO, Ta 2 O 5 , B 2 O 3 ,MgO, and Co 3 O 4 .
7. The sputtering target according to claim 6 , wherein said sintered body has a relative density of 95% or more.
8. A sputtering target for producing a magnetic recording film, comprising a sintered body comprising a metal matrix and carbon particles in a form of flaked graphite dispersed in said metal matrix and having a peak intensity ratio (I G /I D ) for a peak intensity of the G-band, I G , and a peak intensity of the D-band, I D , of 5.0 or more in Raman scattering spectrometry, said metal matrix consisting of Fe, 5 mol % or more and 60 mol % or less of Pt, and 0.5 mol % or more and 20 mol % or less of at least one additional element selected from the group consisting of B, Ru, Au, and Cu, and a content of said carbon particles in said sintered body being 10 mol % or more and 70 mol %, wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of particles of at least one oxide additive selected from the group consisting of SiO 2 ,Cr 2 O 3 , CoO, Ta 2 O 5 , B 2 O 3 ,MgO, and Co 3 O 4 .
9. The sputtering target according to claim 8 , wherein said sintered body has a relative density of 95% or more.