IP Library Granted Patent US 9,260,292
Granted Patent B2
US 9,260,292 · App. 14/376,945 · Granted Feb 16, 2016

Sensor device

Inventor: Takashi Kasai (Shiga, JP)
Assignee: OMRON Corporation
B81B7/0058B81B7/0064B81C1/00246H04R19/005H04R31/006B81B2201/0257B81B2201/0292B81B2207/115H04R1/04H04R1/06H04R19/04
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Quick Facts
Patent No.
US 9,260,292
App. No.
14/376,945
Granted
Feb 16, 2016
Kind
B2
Abstract

A sensor device has a substrate, a sensor section provided on an upper surface of the substrate, a circuit section provided on the upper surface of the substrate, a plurality of connection pads that electrically conduct with the sensor section or the circuit section, and a metal protective film covering at least a part of the circuit section from above.

Claims (64)

1. A sensor device comprising:

a substrate;

a sensor section provided on an upper surface of the substrate;

a circuit section provided on the upper surface of the substrate;

a plurality of connection pads that electrically conduct with the sensor section or the circuit section; and

a metal protective film substantially covering the entire circuit section from above,

wherein the sensor section includes:

a movable electrode provided above the substrate;

a dome portion formed of an insulating material fixed to the upper surface of the substrate so as to cover the movable electrode with a gap interposed between itself and movable electrode; and

a fixed electrode provided in the dome portion at a position facing the movable electrode,

wherein a surface of the circuit section is covered with a second insulating layer having a thickness equal to that of a gap formed between the movable electrode and fixed electrode, and

wherein the metal protective film is formed above the second insulating layer.

2. The sensor device according to claim 1 ,

wherein the circuit section is covered with a first insulating layer, and

wherein the metal protective film is formed on an upper surface of the first insulating film.

3. A sensor device comprising:

a substrate;

a sensor section provided on an upper surface of the substrate;

a circuit section provided on the upper surface of the substrate;

a plurality of connection pads that electrically conduct with the sensor section or the circuit section; and

a metal protective film substantially covering the entire circuit section from above,

wherein the circuit section is covered with a first insulating layer,

wherein the metal protective film is formed on an upper surface of the first insulating layer,

wherein the sensor section includes:

a movable electrode provided above the substrate;

a dome portion formed of an insulating material fixed to the upper surface of the substrate so as to cover the movable electrode with a gap interposed between itself and movable electrode; and

a fixed electrode provided in the dome portion at a position facing the movable electrode, and

wherein the first insulating layer has a thickness equal to that of the dome portion and is formed of the same material as that of the dome portion.

4. The sensor device according to claim 3 ,

wherein the metal protective film is removed partially in an area above the circuit section.

5. The sensor device according to claim 3 ,

wherein the metal protective film is electrically short-circuited to some of the connection pads.

6. The sensor device according to claim 3 ,

wherein an outer peripheral portion of the upper surface of the substrate is exposed from the metal protective film.

7. The sensor device according to claim 3 ,

wherein an area having a length of at least 40 mm or more from an outer peripheral edge of the upper surface of the substrate is exposed from the metal protective film.

8. The sensor device according to claim 3 ,

wherein at least a surface of the metal protective film is formed of an Au film.

9. A sensor device comprising:

a substrate;

a sensor section provided on an upper surface of the substrate;

a circuit section provided on the upper surface of the substrate;

a plurality of connection pads that electrically conduct with the sensor section or the circuit section; and

a metal protective film substantially covering the entire circuit section from above,

wherein the circuit section is covered with a first insulating layer,

wherein the metal protective film is formed on an upper surface of the first insulating layer,

wherein the sensor section includes:

a movable electrode provided above the substrate;

a dome portion formed of an insulating material fixed to the upper surface of the substrate so as to cover the movable electrode with a gap interposed between itself and movable electrode; and

a fixed electrode provided in the dome portion at a position facing the movable electrode,

wherein a surface of the circuit section is covered with a second insulating layer having a thickness equal to that of a gap formed between the movable electrode and fixed electrode, and

wherein the metal protective film is formed above the second insulating layer.

10. A sensor device comprising:

a substrate;

a sensor section provided on an upper surface of the substrate;

a circuit section provided on the upper surface of the substrate;

a plurality of connection pads that electrically conduct with the sensor section or the circuit section; and

a metal protective film substantially covering the entire circuit section from above,

wherein the sensor section includes:

a movable electrode provided above the substrate;

a dome portion formed of an insulating material fixed to the upper surface of the substrate so as to cover the movable electrode with a gap interposed between itself and movable electrode; and

a fixed electrode provided in the dome portion at a position facing the movable electrode,

wherein the circuit section is covered with a first insulating layer having a thickness equal to that of the dome portion, and

wherein the metal protective film is formed on an upper surface of the first insulating layer.

Assignments (3)
DE-MERGER Recorded May 20, 2022
From: OMRON CORPORATION
To: SHIGA SEMICONDUCTOR CO., LTD.
Reel/Frame 060132/0451 →
CHANGE OF NAME AND ADDRESS Recorded May 20, 2022
From: SHIGA SEMICONDUCTOR CO., LTD.
To: MMI SEMICONDUCTOR CO., LTD.
Reel/Frame 060132/0466 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2014
From: KASAI, TAKASHI
To: OMRON CORPORATION
Reel/Frame 033687/0560 →
Priority Claims (1)
JP 2012-043380 · Feb 29, 2012 · national
Continuity (1)
Related Publication 20140374859A1 · Dec 25, 2014