IP Library Granted Patent US 10,533,729
Granted Patent B2
US 10,533,729 · App. 14/377,508 · Granted Jan 14, 2020

Light source with LED chip and luminophore layer

Inventor: Krister Bergenek (Regensburg, DE)
Assignee: OSRAM GmbH
F21V13/02F21K9/64F21V9/32
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Quick Facts
Patent No.
US 10,533,729
App. No.
14/377,508
Granted
Jan 14, 2020
Kind
B2
Abstract

A light source may include an LED chip having a light-emitting surface, on which a luminophore layer is arranged. The luminophore layer may include adjacently arranged regions having different luminophores. A lighting device may include at least one light source.

Claims (46)

1. A light source comprising

an LED chip having a light-emitting surface, wherein a luminophore layer is arranged on or over the LED chip and where the luminophore layer is in direct contact with the light-emitting surface of the LED chip,

wherein the luminophore layer comprises two or more adjacently arranged luminophores which comprise a first luminophore and at least a second luminophore where the second luminophore comprises a different luminophore from the first luminophore, and the second luminophore is arranged in a respective recess of the first luminophore; wherein the respective recess passes entirely through the first luminophore to the light-emitting surface of the LED chip, wherein the second luminophore is laterally completely enclosed by the first luminophore and is in direct contact with the light-emitting surface of the LED chip.

2. The light source as claimed in claim 1 ,

wherein the first luminophore is a ceramic luminophore;

wherein the luminophore layer is a ceramic layer.

3. The light source as claimed in claim 2 ,

wherein a thickness of the ceramic layer lies between about 30 and about 350 micrometers.

4. The light source as claimed in claim 2 ,

wherein the ceramic layer comprises a lower subregion not provided with activators and an upper subregion provided with at least one activator.

5. The light source as claimed in claim 2 ,

wherein the ceramic layer comprises Ce-doped LuAG or YAG as a ceramic luminophore.

6. The light source as claimed in claim 2 ,

wherein the ceramic layer comprises Eu-doped (Ba,Sr)—SiON as a ceramic luminophore.

7. The light source as claimed in claim 1 ,

wherein the second luminophore is an Eu-doped nitridic luminophore.

8. The light source as claimed in claim 1 ,

wherein a surface fraction of the second luminophore lies between about ⅓ and about ⅔.

9. A lighting device comprising at least one light,

the light source comprising

an LED chip having a light-emitting surface, wherein a luminophore layer is arranged on or over the LED chip and where the luminophore layer in direct contact with the light-emitting surface of the LED chip,

wherein the luminophore layer comprises two or more adjacently arranged luminophores which comprises a first luminophore and at least a second luminophore where the second luminophore comprises a different luminophore from the first luminophore, and the second luminophore is arranged in a respective recess of the first luminophore, wherein the respective recess passes entirely through the first luminophore to the light-emitting surface of the LED chip, wherein the second luminophore is laterally completely enclosed by the first luminophore and is in direct contact with the light-emitting surface of the LED chip.

10. The lighting device as claimed in claim 9 ,

wherein the lighting device comprises a housed light source.

11. The lighting device as claimed in claim 9 ,

wherein the lighting device comprises a plurality of light sources fitted on a common carrier.

12. The lighting device as claimed in claim 11 ,

wherein a common diffusing element is arranged optically downstream of the light sources.

13. The light source as claimed in claim 2 ,

wherein the ceramic layer is a platelet.

14. The light source as claimed in claim 3 ,

wherein the ceramic layer comprises a lower subregion not provided with activators and an upper subregion provided with at least one activator.

15. The light source as claimed in claim 5 ,

wherein Ce-doped LuAG or YAG has a Ce concentration of between about 0.5% and 3%.

16. The light source as claimed in claim 6 ,

wherein Eu-doped (Ba,Sr)—SiON has an Eu concentration of between about 0.5% and 2%.

17. The light source as claimed in claim 7 ,

wherein the Eu-doped nitridic luminophore is (Sr,Ba,Ca)2Si5N8:Eu or (Sr,Ca)AlSiN3:Eu.

18. The light source as claimed in claim 1 ,

wherein the second luminophore extends perpendicularly through the luminophore layer to the light-emitting surface.

19. The light source as claimed in claim 1 , wherein the luminophore layer has a planar surface on the side facing away from the LED-chip.

20. A method for producing a light source:

applying a first luminophore on a light-emitting surface of an LED-chip;

forming a recess in the first luminophore;

wherein the recess entirely passes through to the light-emitting surface of the LED chip, and

filling the recess with a second luminophore to obtain a luminophore layer comprising the first luminophore and the second luminophore arranged adjacent to each other; wherein the luminophore layer is in direct contact with the light-emitting surface of the LED chip.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051464/0504 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2014
From: BERGENEK, KRISTER
To: OSRAM GMBH
Reel/Frame 033491/0867 →
Priority Claims (1)
DE 10 2012 202 927 · Feb 27, 2012 · national
Continuity (1)
Related Publication 20140376223A1 · Dec 25, 2014