IP Library Granted Patent US 9,499,900
Granted Patent B2
US 9,499,900 · App. 14/379,805 · Granted Nov 22, 2016

Ion milling device

Inventors: Atsushi Kamino (Tokyo, JP); Hisayuki Takasu (Tokyo, JP); Hirobumi Muto (Tokyo, JP); Toru Iwaya (Tokyo, JP)
Assignee: Hitachi High-Technologies Corporation
C23C14/30G01N1/32H01J37/20H01J37/30H01J37/3053H01J37/3056H01J2237/317H01J2237/31745H01J2237/31749H01J2237/334
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Quick Facts
Patent No.
US 9,499,900
App. No.
14/379,805
Granted
Nov 22, 2016
Kind
B2
Abstract

The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.

Claims (15)

1. An ion milling device comprising:

an ion source for irradiating an upper surface of a sample with an ion beam having an optical axis, the sample further comprising a lower surface and a plurality of side surfaces;

a sample stage disposed within a vacuum chamber for the sample to be irradiated with the ion beam;

a sample holder, to hold the sample, including a first contact surface and a second contact surface; and

a mask to partially limit irradiation of the sample with the ion beam, the mask comprising an upper surface, a lower surface and a plurality of side surfaces,

wherein the first contact surface contacts a side surface of the sample that is proximate to the optical axis of the ion beam, and the second contact surface contacts a side surface of the mask that is proximate to the optical axis of the ion beam so that the sample is partially exposed from the mask.

2. The ion milling device according to claim 1 , wherein the first contact surface and the second contact surface are formed into a stepped shape.

3. The ion milling device according to claim 1 , wherein the first contact surface includes two surfaces that contact different regions of the sample, and wherein a passage opening through which the ion beam passes is provided between the two surfaces of the first contact surface.

4. An ion milling sample table for an ion milling device that processes a sample by irradiating an upper surface of the sample with an ion beam emitted from an ion source, the sample table comprising:

a shield arranged at a position that contacts the sample between the sample and the ion source, the sample further comprising a lower surface and a plurality of side surfaces, and the shield comprising an upper surface, a lower surface and a plurality of side surfaces; and

a surface, for fixing the sample, including a first protrusion structure for holding a side surface of the sample that is proximate to an optical axis of the ion beam, a second protrusion structure for holding a side surface of the shield that is proximate to the optical axis of the ion beam, and a groove that is not directly irradiated with the ion beam that penetrates through the sample.

5. The ion milling sample table according to claim 4 , wherein an irradiation area of the sample is determined according to a relative position of the first and second protrusion structures.

6. The ion milling sample table according to claim 4 , wherein the sample and the shield are fixed to the sample table.

7. The ion milling sample table according to claim 4 , further comprising a cap structure that can seal atmosphere.

8. The ion milling device according to claim 1 , wherein the sample holder includes a cap structure that can seal atmosphere.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2014
From: KAMINO, ATSUSHI; TAKASU, HISAYUKI; MUTO, HIROBUMI; IWAYA, TORU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 033644/0122 →
Priority Claims (1)
JP 2012-068582 · Mar 26, 2012 · national
Continuity (1)
Related Publication 20150008121A1 · Jan 8, 2015