Abrasive, abrasive set, and method for abrading substrate
View Patent ↗The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.
1. A polishing agent comprising:
water,
an abrasive grain containing a hydroxide of a tetravalent metal element, and
a glycerin compound,
the glycerin compound being at least one compound represented by general formula (II) below:
wherein, in formula (II), n represents an integer of 2 or greater, and R 1 , R 2 and multiple R 3 each independently represent hydrogen atom, a group represented by general formula (III) below or a group represented by general formula (IV) below;
and wherein the case where R 1 , R 2 and multiple R 3 are all hydrogen atom is excluded;
wherein, in formula (III), p represents an integer of 1 or greater
and wherein, in formula (IV), q represents an integer of 1 or greater.
2. The polishing agent according to claim 1 , wherein the hydroxide of a tetravalent metal element is at least one selected from the group consisting of hydroxide of rare earth metal element and hydroxide of zirconium.
3. The polishing agent according to claim 1 , wherein a mean particle diameter of the abrasive grain is 1 nm or greater and 300 nm or less.
4. The polishing agent according to claim 1 , wherein a content of the abrasive grain is 0.005 mass % or greater and 20 mass % or less based on a total mass of the polishing agent.
5. The polishing agent according to claim 1 , wherein a weight-average molecular weight of the glycerin compound is 250 or greater and 10×10 3 or less.
6. The polishing agent according to claim 1 , wherein a content of the glycerin compound is 0.01 mass % or greater and 10 mass % or less based on a total mass of the polishing agent.
7. The polishing agent according to claim 1 , wherein a pH is 3.0 or greater and 12.0 or less.
8. The polishing agent according to claim 1 , used for polishing of a surface to be polished containing silicon oxide.
9. A polishing agent set comprising constituent components of the polishing agent according to claim 1 separately stored as a first liquid and a second liquid,
the first liquid containing the abrasive grain and water, and
the second liquid containing the glycerin compound and water.
10. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using the polishing agent according to claim 1 .
11. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 9 .
12. A polishing method for a base substrate having an insulating material and polysilicon,
the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using the polishing agent according to claim 1 .
13. A polishing method for a base substrate having an insulating material and polysilicon,
the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 9 .