Semiconductor device and production method therefor
View Patent ↗A manufacturing method for a semiconductor device in which connection portions of a semiconductor chip are electrically connected to connection portions of a wiring circuit substrate or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising a step of sealing at least part of the connection portions with an adhesive for a semiconductor comprising a compound having a group represented by the following formula (1): wherein R 1 represents an electron-donating group.
1. A manufacturing method for a semiconductor device, wherein connection portions of a semiconductor chip are electrically connected to connection portions of a wiring circuit substrate or connection portions of a plurality of semiconductor chips are electrically connected to each other,
the method comprising:
a step of laminating a film-shaped adhesive for a semiconductor on the semiconductor chip, the adhesive for a semiconductor comprising a compound having a group represented by the following formula (1):
wherein R 1 represents an electron-donating group; and
a step of sealing at least part of the connection portions with a cured product of the adhesive for a semiconductor.
2. The manufacturing method for a semiconductor device according to claim 1 , wherein the compound is a compound having two carboxyl groups.
3. The manufacturing method for a semiconductor device according to claim 1 , wherein the compound is a compound represented by the following formula (2):
wherein R 1 represents an electron-donating group; R 2 represents a hydrogen atom or an electron-donating group; n represents an integer of 0 to 15; and a plurality of R 2 may be identical or different from each other.
4. The manufacturing method for a semiconductor device according to claim 1 , wherein the compound is a compound represented by the following formula (3):
wherein R 1 represents an electron-donating group; R 2 represents a hydrogen atom or an electron-donating group; and m represents an integer of 0 to 10.
5. The manufacturing method for a semiconductor device according to claim 4 , wherein m is an integer of 0 to 5.
6. The manufacturing method for a semiconductor device according to claim 4 , wherein in Formula (3), R 2 is a hydrogen atom.
7. The manufacturing method for a semiconductor device according to claim 1 , wherein the compound has a melting point of 150° C. or less.
8. The manufacturing method for a semiconductor device according to claim 1 , wherein the electron-donating group is an alkyl group having 1 to 10 carbon atoms.
9. The manufacturing method for a semiconductor device according to claim 1 , wherein the adhesive for a semiconductor further comprises a polymer component having a weight average molecular weight of 10000 or more.
10. The manufacturing method for a semiconductor device according to claim 1 , wherein the compound is methylsuccinic acid, 2-methylglutaric acid, 2-methyladipic acid, 2-methylpimelic acid, or 2-methylsuberic acid.
11. A semiconductor device prepared by the manufacturing method according to claim 1 .
12. The manufacturing method for a semiconductor device according to claim 1 , wherein the adhesive for a semiconductor further comprises resin fillers.