Detection devices and methods

1. A detection device comprising:

a first semiconductor device;

a second semiconductor device;

an electron separator layer between the first semiconductor device and the second semiconductor device; and

a conversion layer between the first semiconductor device and the second semiconductor device;

wherein the conversion layer comprises gadolinium;

wherein the conversion layer has a thickness of from about 20 μm to about 40 μm;

wherein the electron separator layer comprises a first surface and a second surface; and

wherein the first surface is in physical contact with the conversion layer.

2. The detection device of claim 1 , wherein the conversion layer is a coating layer deposited on the second semiconductor device.

3. The detection device of claim 1 , wherein the conversion layer is a gadolinium-doped superlattice.

4. The detection device of claim 1 , wherein the electron separator layer comprises polyethylene.

5. The detection device of claim 1 , wherein the second surface is in physical contact with one of the first semiconductor device and the second semiconductor device.

6. The detection device of claim 1 , wherein the first semiconductor device and the second semiconductor device comprise gallium nitride.

7. The detection device of claim 1 , wherein the electron separator layer comprises a polyolefin.

8. The detection device of claim 1 , wherein the device only contains one conversion layer.

9. A method for detecting neutrons, comprising:

providing a detection device comprising:

a first semiconductor device;

a second semiconductor device;

an electron separator layer between the first semiconductor device and the second semiconductor device; and

a conversion layer between the first semiconductor device and the second semiconductor device;

wherein the conversion layer comprises gadolinium;

wherein the conversion layer has a thickness of from about 20 μm to about 40 μm;

wherein the electron separator layer comprises a first surface and a second surface; and

wherein the first surface is in physical contact with the conversion layer;

applying a first, reverse bias voltage to the first semiconductor device and a second, reverse bias voltage to the second semiconductor device; and

comparing a first signal from the first semiconductor device to a second signal from the second semiconductor device to detect neutron radiation.

10. The method of claim 9 , wherein the electron separator layer comprises polyethylene.

11. The method of claim 9 , wherein the second surface is in physical contact with one of the first semiconductor device and the second semiconductor device.

12. The method of claim 9 , wherein the first semiconductor device and the second semiconductor device comprise gallium nitride.

13. The method of claim 9 , wherein the electron separator layer comprises a polyolefin.

14. A method for detecting gamma radiation, comprising:

providing a detection device comprising a first semiconductor device and a conversion layer disposed on the semiconductor device, wherein the conversion layer comprises gadolinium;

applying a reverse bias voltage to the semiconductor device; and

measuring a signal generated by K x-rays to determine the intensity of gamma radiation.

15. The method of claim 14 , wherein the conversion layer has a thickness from about 20 to about 40 μm.

16. The method of claim 14 , wherein the conversion layer has a thickness of from about 20 μm to 25 μm.

17. The method of claim 14 , wherein the conversion layer has a thickness of from 25 μm to about 40 μm.

18. The method of claim 14 , wherein the detection device further comprises a second semiconductor device and an electron separator layer; and wherein the electron separator layer and the conversion layer reside between the first semiconductor device and the second semiconductor device.

19. The method of claim 14 , wherein the electron separator layer comprises a polyolefin.

20. The method of claim 14 , wherein the electron separator layer comprises polyethylene.