Light-emitting semiconductor component and method for producing a light-emitting semiconductor component
The invention relates to a light-emitting semiconductor component comprising a light-emitting semiconductor chip with a semiconductor layer series, a light out-coupling surface, a rear surface lying opposite said light out-coupling surface and lateral surfaces, and a support body with a shaped body that directly covers the lateral surfaces in form-locked manner, two electric contact layers and a thermal contact layer being provided on the rear surface. The thermal contact layer is electrically insulated from the electric contact layers and the semiconductor layer series, the support body has electric connection elements in direct contact with the electric contact layers and a thermal connection element in direct contact with the thermal contact layer on the rear surface and the thermal connection element at least partially forms an assembly surface of the semiconductor component facing away from the semiconductor chip. The invention further relates to a method for producing a semiconductor component.
1. A method for producing a light-emitting semiconductor component, the method comprising:
providing a light-emitting semiconductor chip, the semiconductor chip comprising a semiconductor layer sequence, a light coupling-out surface, a rear-side surface situated opposite the light coupling-out surface, and side surfaces connecting the light coupling-out surface and the rear-side surface; and
forming a carrier body comprising a molded body, which directly covers the side surfaces of the semiconductor chip in a form-locking manner,
wherein electrical contact layers and a thermal contact layer are located on the rear-side surface of the semiconductor chip,
wherein the thermal contact layer is electrically insulated from the electrical contact layers and the semiconductor layer sequence,
wherein the carrier body has, at the rear-side surface of the semiconductor chip, electrical connection elements in direct contact with the electrical contact layers of the semiconductor chip and a thermal connection element in direct contact with the thermal contact layer of the semiconductor chip,
wherein the electrical connection elements and the thermal connection element are formed on the semiconductor chip by electroplating, and
wherein the thermal connection element at least partly forms a mounting surface of the semiconductor component that faces away from the semiconductor chip.
2. The method according to claim 1 , wherein the molded body terminates flush with the light coupling-out surface.
3. The method according to claim 1 , wherein a wavelength conversion element is arranged on the light coupling-out surface.
4. The method according to claim 1 , wherein the carrier body has an electrically insulating material between the electrical connection elements and the thermal connection element.
5. The method according to claim 1 , wherein the electrical connection elements are arranged in an interior of the carrier body.
6. The method according to claim 1 , wherein the electrical connection elements are partly applied on the molded body.
7. The method according to claim 1 , wherein the thermal connection element projects beyond the electrical connection elements in a lateral direction.
8. The method according to claim 1 , wherein the molded body has an electrical via which is electrically connected to an electrical connection element.
9. The method according to claim 8 , wherein the thermal connection element forms the entire mounting surface of the semiconductor component.
10. The method according to claim 1 , wherein the semiconductor chip has an electrically insulating layer between the semiconductor layer sequence and the thermal contact layer.
11. The method according to claim 1 , wherein the thermal contact layer occupies a larger area than the electrical contact layers on the rear-side surface of the semiconductor chip.
12. The method according to claim 1 , wherein, in the molded body, a plurality of light-emitting semiconductor chips are arranged laterally alongside one another and the carrier body has a continuous thermal connection element, with which the thermal contact layers of the semiconductor chips are in direct contact.
13. A method for producing a light-emitting semiconductor component, the method comprising:
providing a light-emitting semiconductor chip, the semiconductor chip comprising a semiconductor layer sequence, a light coupling-out surface, a rear-side surface situated opposite the light coupling-out surface, and side surfaces connecting the light coupling-out surface and the rear-side surface, wherein electrical contact layers and a thermal contact layer are arranged on the rear-side surface of the semiconductor chip and the thermal contact layer is electrically insulated from the electrical contact layers and the semiconductor layer sequence; and
forming a carrier body for the semiconductor chip by:
molding a molded body around the semiconductor chip, the molded body directly covering the side surfaces of the semiconductor chip in a form-locking manner; and
after molding the molding body around the semiconductor chip, forming electrical connection elements in direct contact with the electrical contact layers of the semiconductor chip and a thermal connection element in direct contact with the thermal contact layer of the semiconductor chip by an electroplating method, wherein the thermal connection element is applied with a thickness such that it forms a mounting side of the semiconductor component that faces away from the semiconductor chip.
14. The method according to claim 1 , wherein the molded body does not cover the light coupling-out surface.
15. A method for producing a light-emitting semiconductor component, the method comprising:
providing a light-emitting semiconductor chip, the semiconductor chip comprising a semiconductor layer sequence, a light coupling-out surface, a rear-side surface situated opposite the light coupling-out surface, and side surfaces connecting the light coupling-out surface and the rear-side surface;
forming electrical contact layers on the rear-side surface of the semiconductor chip;
forming a thermal contact layer on the rear-side surface of the semiconductor chip, wherein the thermal contact layer is electrically insulated from the electrical contact layers and the semiconductor layer sequence; and
forming a carrier body for the semiconductor chip by:
molding a molded body directly covering the side surfaces of the semiconductor chip;
forming electrical connection elements on the molded body and in direct contact with the electrical contact layers of the semiconductor chip; and
forming a thermal connection element on the molded body and in contact with the thermal contact layer of the semiconductor chip, wherein the electrical connection elements and the thermal connection element are formed on the semiconductor chip by electroplating.
16. The method according to claim 15 , wherein the molded body comprises electrical through-vias electrically connected to the electrical connection elements.
17. The method according to claim 15 , further comprising electrical vias, wherein the electrical vias are electrically connected to the electrical connection elements, and wherein the thermal connection element comprises openings, and wherein the electrical vias are disposed in the openings.