Devices having an electron emitting structure
The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.
1. An x-ray emitting device comprising:
an x-ray emitting construct, an electron emitting construct, at least one spacer, a voltage source and a gate interconnect lead;
said at least one spacer situated such that the x-ray emitting construct and the electron emitting construct face each other;
an evacuated inner gap between said x-ray emitting construct and said electron emitting construct;
said x-ray emitting construct comprising an anode, the anode being an x-ray target; and
said electron emitting construct comprising at least one active zone, each of said at least one active zone comprising at least one active area comprising:
(a) a cathode;
(b) a gated cone electron source, comprising a plurality of emitter tips arranged in an array;
(c) a resistive layer situated between the gated cone electron source and the cathode; and
(d) a gate electrode comprising a plurality of gate holes, the position of at least one of said plurality of gate holes corresponding to the position of at least one of said plurality of emitter tips;
wherein each of said plurality of emitter tips is configured to emit an electron beam towards the x-ray emitting construct;
wherein the gate electrode is connected to said voltage source through said gate interconnect lead;
wherein the resistive layer is characterized by at least one feature selected from:
the resistive layer is of a thickness greater than 300 nanometer or between 300 and 5000 nanometers;
the resistive layer comprises SiCN;
the resistive layer comprising a first barrier sublayer situated at the interface with the cathode; and
the resistive layer comprising a second barrier sublayer situated at the interface with the gated cone electron source; and
wherein the first barrier sublayer and the second barrier sublayer are characterized by at least one feature selected from:
the first barrier sublayer and the second barrier sublayer are comprising SiCN or SiC having a silicon atomic percentage of less than 40%; and
the first barrier sublayer and the second barrier sublayer are comprising amorphous carbon.
2. The x-ray emitting device of claim 1 , wherein a diameter of each of the plurality of gate holes is less than 200 nanometers.
3. The x-ray emitting device of claim 1 , wherein the at least one active zone being characterized by at least one feature selected from:
(a) the at least one active zone comprising more than one active area;
(b) the at least one active zone is enclosed by at least one focus structure;
(c) the at least one active zone comprising a plurality of active areas, wherein said plurality of active areas are configured to be co-activated; and
(d) the at least one active zone comprising a plurality of active areas, wherein one or more subsets of said plurality of active areas are capable of being activated independently.
4. The x-ray emitting device of claim 3 , wherein the at least one active area being characterized by at least one feature selected from:
(a) the at least one active area being of an area of between 100 square microns and 4 square millimeters; and
(b) the at least one active area comprising between 1 and 10 emitter tips per square micron.
5. The x-ray emitting device of claim 1 , wherein the gate electrode being situated in a gap of the gate interconnect lead such that the gate electrode is connected on all sides to the gate interconnect lead.
6. The x-ray emitting device of claim 5 , wherein the gate interconnect lead being characterized by at least one feature selected from:
(a) the gate interconnect lead is thicker than the gate electrode; and
(b) the gate interconnect lead is of a thickness between 0.5 micron and 20 microns.
7. The x-ray emitting device of claim 1 , wherein the cathode is of a thickness between 0.5 micron and 20 microns.
8. The x-ray emitting device of claim 1 , further comprising a substrate.
9. The x-ray emitting device of claim 8 , wherein at least one member selected from the group consisting of the gate electrode, the cathode, the resistive layer and the gated cone electron source is integral to the substrate.
10. The x-ray emitting device of claim 9 , wherein the substrate is silicon-based.