IP Library Granted Patent US 9,123,507
Granted Patent B2
US 9,123,507 · App. 14/385,802 · Granted Sep 1, 2015

Arrangement and method for transporting radicals

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Quick Facts
Patent No.
US 9,123,507
App. No.
14/385,802
Granted
Sep 1, 2015
Kind
B2
Abstract

The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body. The plasma generator includes a chamber ( 2 ) in which a plasma may be formed. The chamber has an inlet ( 5 ) for receiving an input gas, and one or more outlets ( 6 ) for removal of at least one of the plasma and radicals created therein. The guiding body is hollow and is arranged for guiding radicals formed in the plasma towards an area or volume at which contaminant deposition is to be removed. The chamber inlet is coupled to a pressure device ( 40 ) for providing a pulsed pressure into the chamber so as to create a flow in the guiding body.

Claims (25)

1. Electron beam lithography system comprising:

a beamlet generator for generating a plurality of electron beamlets;

a plurality of beamlet manipulator elements for manipulating the electron beamlets, at least one of the beamlet manipulator elements comprising an aperture array;

a plasma generator comprising a chamber in which a plasma may be formed, the chamber comprising an inlet for receiving an input gas, and one or more outlets for removal of at least one of the plasma and radicals created therein;

a hollow guiding body for guiding radicals formed in the plasma towards the aperture array at which contaminant deposition is to be removed; and

a pressure regulator having an inlet with a first cross-sectional area, and an outlet with a second cross-sectional area, the first cross-sectional area being greater than the second cross-sectional area, the pressure regulator inlet being coupled to the one or more chamber outlets, the pressure regulator outlet being coupled to the guiding body,

wherein the chamber is provided with a flow restrictor.

2. Electron beam lithography system according to claim 1 , wherein the flow restrictor is a perforated wall.

3. Electron beam lithography system according to claim 1 , wherein the pressure regulator takes the form of a funnel.

4. Electron beam lithography system according to claim 1 , wherein the pressure regulator outlet is provided with an extended portion onto which the guiding body is removably attachable.

5. Electron beam lithography system according to claim 4 , further comprising a cover for placement over the connection between the guiding body and the extended portion of the pressure regulator outlet.

6. Electron beam lithography system according to claim 1 , wherein the pressure regulator is provided with a further inlet for receiving an inlet gas.

7. Electron beam lithography system according to claim 1 , wherein the hollow guiding body takes the form of a tube.

8. Electron beam lithography system according to claim 1 , wherein the plasma generator further comprises a radio frequency coil around the outside of the chamber for generating a plasma within the chamber.

9. Pressure regulator for connection to a chamber containing a plasma, the pressure regulator having an inlet for receiving at least one of plasma and radicals created therein, the inlet having a first cross-sectional area, and an outlet with a second cross-sectional area, the first cross-sectional area being greater than the second cross-sectional area, the pressure regulator inlet being coupled to the plasma chamber, the pressure regulator outlet being removably attachable to a hollow body.

10. Pressure regulator according to claim 9 , wherein the pressure regulator takes the form of a funnel.

11. Pressure regulator according to claim 9 , wherein the pressure regulator is provided with a further inlet for receiving an inlet gas.

12. Method for transporting radicals, the method comprising:

providing an electron beam lithography system according to claim 1 with an end of the hollow guiding body in close proximity of the area or volume at which contaminant deposition is to be removed;

inserting an input gas into the chamber;

forming a plasma and radicals in the chamber; and

creating a flow of radicals towards the end of the hollow guiding body,

and wherein the lithography system is provided with a pressure regulator according to claim 11 , and wherein the method further comprises inserting an inlet gas via the further inlet of the pressure regulator.

13. Method according to claim 12 , wherein the plasma generator of the electron beam lithography system comprises a radio frequency coil around the outside of the chamber, and wherein forming a plasma comprises energizing the radio frequency coil.

14. Method according to claim 12 , wherein the input gas is oxygen.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2019
From: WITTEKAMP, J.J.
To: ASML NETHERLANDS B.V.
Reel/Frame 049296/0606 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2014
From: KRUIT, PIETER; SMITS, MARC
To: MAPPER LITHOGRAPHY IP B.V.
Reel/Frame 034605/0097 →