Magnetic recording medium and magnetic recording and reproducing apparatus
A thermally-assisted magnetic recording medium or a microwave-assisted magnetic recording medium includes: an orientation control layer ( 104 ) that is formed on a substrate ( 101 ); an underlayer ( 10 ) that is formed on the orientation control layer ( 104 ); and a magnetic layer ( 108 ) that is formed on the underlayer ( 10 ) and contains an alloy having an L1 0 type crystal structure as a main component, in which the underlayer ( 10 ) includes an MgO underlayer ( 107 ) that contains MgO and has a (100) orientation and a nitride underlayer ( 106 ) that contains at least one nitride selected from the group consisting of TaN, NbN, and HfN and has a (100) orientation.
1. A magnetic recording medium, comprising:
an orientation control layer that is formed on a substrate;
an underlayer that is formed on the orientation control layer; and
a magnetic layer that is formed on the underlayer and contains an alloy having an L1 0 type crystal structure as a main component,
wherein the underlayer includes an MgO underlayer that contains MgO and has a (100) orientation and a nitride underlayer that contains at least one nitride selected from the group consisting of TaN, NbN, and HfN and has a (100) orientation, and
recording is performed by using thermally-assisted magnetic recording method or microwave-assisted magnetic recording method.
2. The magnetic recording medium according to claim 1 ,
wherein the MgO underlayer is formed on the nitride underlayer.
3. The magnetic recording medium according to claim 1 ,
wherein the nitride underlayer is formed on the MgO underlayer.
4. The magnetic recording medium according to claim 1 ,
wherein the orientation control layer includes a (100)-oriented BCC underlayer that contains Cr, Mo, Nb, Ta, V, W, or Cr as a main component and has a BCC structure containing at least one element selected from the group consisting of Mn, Mo, Ru, Ti, V, and W.
5. The magnetic recording medium according to claim 1 ,
wherein the orientation control layer includes a B2 underlayer that has a B2 structure consisting of NiAl or RuAl.
6. The magnetic recording medium according to claim 1 ,
wherein the magnetic layer contains a FePt alloy or a CoPt alloy having an L1 0 type crystal structure as a main component and contains at least one oxide or element selected from the group consisting of SiO 2 , TiO 2 , Cr 2 O 3 , Al 2 O 3 , Ta 2 O 5 , ZrO 2 , Y 2 O 3 , CeO 2 , MnO, TiO, ZnO, and C.
7. A magnetic recording and reproducing apparatus, comprising:
the magnetic recording medium according to claim 1 ;
a medium-driving unit that drives the magnetic recording medium in a recording direction;
a magnetic head that includes a laser-generating unit, a waveguide, and a near-field light-generating element and performs a recording operation and a reproducing operation on the magnetic recording medium, in which the laser-generating unit heats the magnetic recording medium, the waveguide guides laser light, which is generated from the laser-generating unit, to a tip end portion, and the near-field light-generating element is provided in the tip end portion;
a head-moving unit that moves the magnetic head relative to the magnetic recording medium; and
a recording and reproducing signal-processing system that inputs a signal to the magnetic head and reproduces a signal output from the magnetic head.
8. A magnetic recording and reproducing apparatus, comprising:
the magnetic recording medium according to claim 1 ;
a medium-driving unit that drives the magnetic recording medium in a recording direction;
an element that irradiates the magnetic recording medium with microwaves;
a magnetic head that performs a recording operation and a reproducing operation on the magnetic recording medium;
a head-moving unit that moves the magnetic head relative to the magnetic recording medium; and
a recording and reproducing signal-processing system that inputs a signal to the magnetic head and reproduces a signal output from the magnetic head.
9. The magnetic recording medium according to claim 1 , wherein the thickness of the nitride underlayer is in a range of 0.5 nm to 30 nm.