Multiferro-heterostructure composition having tunable magnetic coupling at room temperature
View Patent ↗A ferromagnetic/ferroelectric heterostructure thin film is disclosed that exhibits significant magneto-electric coupling. The ferromagnetic/ferroelectric heterostructure thin film includes a) a base layer of silicon substrate, b) a first copper layer deposited on the silicon substrate, c) a first iron layer deposited on the copper layer, d) first aluminum layer deposited on the first iron layer, e) a polymer layer exhibiting ferroelectric properties deposited on the first aluminum layer, f) a second aluminum layer deposited on the polymer layer; g) a second iron layer deposited on the second aluminum layer, and h) a second copper layer deposited on the second iron layer.
1. A ferromagnetic/ferroelectric heterostructure thin film exhibiting significant magneto-electric coupling, comprising:
a. a base layer of silicon substrate;
b. a first copper layer deposited on the silicon substrate;
c. a first iron layer deposited on the copper layer;
d. a first aluminum layer deposited on the first iron layer;
e. a polymer layer exhibiting ferroelectric properties deposited on the first aluminum layer;
f. a second aluminum layer deposited on the polymer layer;
g. a second iron layer deposited on the second aluminum layer; and
h. a second copper layer deposited on the second iron layer.
2. The ferromagnetic/ferroelectric heterostructure thin film of claim 1 , further comprising attached electric leads coupled to the first and second copper layers.
3. The ferromagnetic/ferroelectric heterostructure thin film material of claim 1 , further comprising the use of a magnetic field or electric voltage to control and tune the magneto-electric coupling of the ferromagnetic/ferroelectric heterostructure material.
4. The ferromagnetic/ferroelectric hetero structure thin film material of claim 1 , wherein the first iron layer is deposited on a copper layer at a thickness of 50 nm to 100 nm.
5. The ferromagnetic/ferroelectric Hetero structure thin film material of claim 1 , wherein the second iron layer is deposited on the aluminum layer at a thickness of 10 to 50 nm.
6. The ferromagnetic/ferroelectric heterostructure thin film material of claim 1 , wherein the thickness of the polymer layer is between from 20 nm to 100 nm.
7. The ferromagnetic/ferroelectric hetero structure material of claim 6 , wherein the polymer layer is polyvinylidene fluoride.
8. The ferromagnetic/ferroelectric hetero structure thin film material of claim 1 , wherein the thickness of the first or second aluminum layer is between from 3 nm to 5 nm.
9. The ferromagnetic/ferroelectric hetero structure thin film material of claim 1 , wherein the thickness of the first or second copper layer is between from 500 nm to 1000 nm.
10. The ferromagnetic/ferroelectric hetero structure thin film material of claim 3 , wherein the magneto-electric coupling is tunable at temperature between 40° F. and 100° F.
11. The ferromagnetic/ferroelectric hetero structure thin film material of claim 10 , wherein the magneto-electric coupling is tunable at room temperature.