ALUMINUM COATED COPPER BOND WIRE AND METHOD OF MAKING THE SAME
The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, containing a copper core with a surface and a coating layer containing aluminum superimposed over the surface of the core. In any cross-sectional view of the wire, the area share of the coating layer is from 20 to 50% based on the total area of the cross-section of the wire, and the aspect ratio between longest and shortest paths through the wire is from larger than 0.8 to 1.0. The wire has a diameter of from 100 μm to 600 μm. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing at least two elements and the wire, to a propelled device containing the electric device, and to a process of connecting two elements through the wire by wedge bonding.
1 - 22 . (canceled)
23 . A wire ( 1 ) comprising:
a) a copper core ( 2 ) with a surface ( 15 ); and
b) a coating layer ( 3 ) superimposed over the surface ( 15 ) of the copper core ( 2 ), wherein the coating layer ( 3 ) comprises aluminum,
wherein in a cross-sectional view of the wire ( 1 ) an area share of the coating layer ( 3 ) is in a range of from 10 to 60%, based on a total area of the cross-section of the wire ( 1 ),
an aspect ratio between a longest path ( 5 ) and a shortest path ( 6 ) through the wire ( 1 ) in a cross-sectional view is in a range of from larger than 0.8 to 1.0, and
wherein the wire has a diameter in a range of from 100 μm to 600 μm.
24 . The wire ( 1 ) according to claim 23 , wherein an intermediate layer ( 7 ) is arranged between the core ( 2 ) and the coating layer ( 3 ), and wherein the intermediate layer ( 7 ) comprises at least one intermetallic phase comprising a material of the core and a material of the coating layer.
25 . The wire ( 1 ) according to claim 24 , wherein an area share of the intermediate layer ( 7 ) in a cross-sectional view of the wire ( 1 ) is in a range of from 0.4 to 15%, based on the total area of the cross-section of the wire ( 1 ).
26 . The wire ( 1 ) according to claim 24 , wherein a thickness of the intermediate layer ( 7 ) is in a range of from 0.1 μm to 5 μm.
27 . The wire ( 1 ) according to claim 23 , wherein a diameter of the copper core ( 2 ) is in a range of from 70 to 500 μm, determined in a cross-sectional view of the wire ( 1 ).
28 . The wire ( 1 ) according to claim 23 , wherein a thickness of the coating layer ( 3 ) is in a range of from 10 to 60 μm, determined in a cross-sectional view of the wire ( 1 ).
29 . The wire ( 1 ) according to claim 23 , wherein the copper core comprises at least 95% by weight of copper with a purity of at least 99.9% based on a total weight of the copper core.
30 . The wire ( 1 ) according to claim 23 , wherein the coating layer comprises at least 80% by weight of aluminum with a purity of 99.9% based on a total weight of the coating layer.
31 . The wire ( 1 ) according to claim 23 , wherein a dissipated work is at least two times as high for the wire ( 1 ) than for a reference wire made from pure aluminum.
32 . The wire ( 1 ) according to claim 23 , wherein a maximum strain in a uniaxial cyclic test is at least 1.5 times as high for the wire ( 1 ) than for a reference wire made from pure aluminum.
33 . The wire ( 1 ) according to claim 23 , wherein a number of cycles in a power cycling test is at least three times as high for the wire ( 1 ) than for a reference wire made from pure aluminum.
34 . The wire ( 1 ) according to claim 23 , wherein a wire pull of the wire ( 1 ) is at least ten % higher for the wire ( 1 ) than for a reference wire made from pure aluminum.
35 . A process for manufacturing a wire ( 1 ) comprising at least the following steps:
a) providing a wire precursor ( 9 ) comprising a copper core ( 2 ) with a surface ( 15 ) and a coating layer ( 3 ) superimposed over the surface ( 15 ) of the copper core ( 2 ), wherein the coating layer ( 3 ) comprises aluminum,
wherein in a cross-sectional view of the wire precursor ( 9 ) an area share of the coating layer ( 3 ) is in a range of from 20 to 50%, based on the total area of the cross-section of the wire precursor ( 9 ),
an aspect ratio between a longest path ( 5 ) and a shortest path ( 6 ) through the wire precursor ( 9 ) in a cross-sectional view is in a range of from larger than 0.8 to 1.0, and
wherein the wire precursor ( 9 ) has a diameter in a range of from 0.5 to 5 mm;
b) shaping the wire precursor ( 9 ), and
c) annealing the shaped wire precursor ( 9 ) to obtain the wire ( 1 ), wherein the wire ( 1 ) has a diameter in a range of from 100 μm to 600 μm.
36 . The process according to claim 35 , wherein an intermediate layer ( 7 ) is formed in step c).
37 . The process according to claim 35 , wherein the annealing is performed at a temperature in a range of from 140° C. to 400° C. over a period of from 30 minutes to 5 hours.
38 . A wire ( 1 ) obtained by a process according to claim 35 .
39 . The wire ( 1 ) according to claim 38 , wherein the wire ( 1 ) is characterized by at least one of the following features:
a) a dissipated work is at least two times as high for the wire ( 1 ) than for a reference wire made from pure aluminum;
b) a maximum strain in a uniaxial cyclic test is at least 1.5 times as high for the wire ( 1 ) than for a reference wire made from pure Al;
c) a number of cycles in a power cycling test is at least three times as high for the wire than for a reference wire made from pure aluminum;
d) a wire pull of the wire ( 1 ) is at least 10% higher for the wire ( 1 ) than for a reference wire made from pure aluminum;
e) an electrical conductivity of the wire ( 1 ) is from 20% to 55% higher than an electrical conductivity of a reference wire made from pure aluminum.
40 . An electric device ( 10 ) comprising at least two elements ( 11 ) and at least a wire ( 1 ) according to claim 23 , wherein the wire ( 1 ) electrically connects the two elements ( 11 ).
41 . The electric device ( 10 ) of claim 40 , wherein the electrical connection is obtained by wedge bonding.
42 . The electric device ( 10 ) of claim 40 , wherein at least one of the elements ( 11 ) is selected from the group consisting of a substrate, an IGBT, an integrated circuit, a transistor, and a diode.
43 . A propelled device comprising at least one electric device ( 10 ) according to claim 40 .
44 . A process for making an electric device ( 10 ) comprising the steps of
a) providing at least two elements ( 11 );
b) connecting the two elements ( 11 ) through a wire ( 1 ) according to claim 23 , wherein at least one of the connections is performed by wedge bonding.