IP Library Granted Patent US 9,407,192
Granted Patent B2
US 9,407,192 · App. 14/400,086 · Granted Aug 2, 2016

Method and apparatus for charging a bootstrap charge storage device

Inventor: Thierry Sicard (Auzeville Tolosane, FR)
Assignee: Freescale Semiconductor, Inc.
H02P29/00H03K17/063H03K2217/0036H03K2217/0063H03K2217/0081
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Quick Facts
Patent No.
US 9,407,192
App. No.
14/400,086
Granted
Aug 2, 2016
Kind
B2
Abstract

A charging circuit for at least one bootstrap charge storage element within an inertial load driver circuit is described, the at least one bootstrap charge storage element comprising a first node operably coupled to an output node of at least one switching element of the inertial load driver circuit. The charging circuit comprises at least one current source controllable to provide a current to a second node of the at least one bootstrap charge storage element, and at least one detection component arranged to receive at a first input thereof an indication of a voltage level at the output node of the at least one switching element of the inertial load driver circuit, detect when the voltage level at the output node of the switching element of the inertial load driver circuit is below a negative threshold voltage level, and control the at least one current source to provide a current to the second node of the at least one bootstrap charge storage element when the voltage level at the output node of the switching element of the inertial load driver circuit is below the negative threshold voltage level.

Claims (24)

1. A charging circuit for at least one bootstrap charge storage element within an inertial load driver circuit, the at least one bootstrap charge storage element comprising a first node operably coupled to an output node of at least one switching element of the inertial load driver circuit; the charging circuit comprising:

at least one current source controllable to provide a current to a second node of the at least one bootstrap charge storage element; and

at least one detection component arranged to:

receive at a first input thereof an indication of a voltage level at the output node of the at least one switching element of the inertial load driver circuit;

detect if the voltage level at the output node of the switching element of the inertial load driver circuit is below a negative threshold voltage level; and

control the at least one current source to provide a current to the second node of the at least one bootstrap charge storage element if the voltage level at the output node of the switching element of the inertial load driver circuit is below the negative threshold voltage level.

2. The charging circuit of claim 1 , wherein the negative threshold voltage level comprises a negative voltage level magnitude equal to a negative clamp voltage of the inertial load driver circuit.

3. The charging circuit of claim 1 , wherein the at least one detection component is arranged to:

receive at a second input thereof an indication of the negative threshold voltage level;

compare the received indication of a voltage level at the output node of the switching element of the inertial load driver circuit to the received indication of the negative threshold voltage level; and

output an indication of a result of the comparison to the at least one current source.

4. The charging circuit of claim 3 , wherein the at least one detection component comprises a comparator component.

5. The charging circuit of claim 1 , wherein the at least one current source comprises at least one switching element operably coupled between the second node of the at least one bootstrap charge storage element and a ground plane for the inductive load driver circuit, and arranged to selectively couple the second node of the at least one bootstrap charge storage element to the ground plane.

6. The charging circuit of claim 5 , wherein at least one switching element of the at least one current source comprises at least one n-channel metal oxide semiconductor field effect transistor.

7. The charging circuit of claim 1 , wherein at least one switching element of the inertial load driver circuit comprises at least one n-channel metal oxide semiconductor field effect transistor.

8. The charging circuit of claim 1 , wherein the inertial load driver circuit is arranged to drive a direct current, DC, motor.

9. The charging circuit of claim 1 , wherein the inertial load driver circuit is arranged to be operably coupled between an inertial load and a positive supply voltage.

10. The charging circuit of claim 1 , wherein the inertial load driver circuit comprises at least one switching element control component comprising circuitry arranged to output a control signal to the at least one switching element of the inertial load driver circuit; wherein a negative supply voltage input for the switching element control component circuitry is operably coupled to the output of the at least one switching element of the inertial load driver circuit, and a positive supply voltage input of the switching element control component circuitry is operably coupled to the negative supply via the at least one bootstrap charge storage element.

11. The charging circuit of claim 1 implemented within an integrated circuit device comprising at least one die within a single integrated circuit package.

12. An inertial load driver circuit comprising the charging circuit of claim 1 .

13. A method of charging at least one bootstrap charge storage element within an inertial load driver circuit, the at least one bootstrap charge storage element comprising a first node operably coupled to an output of at least one switching element of the inertial load driver circuit; the method comprising:

receiving an indication of a voltage level at the output node of the at least one switching element of the inertial load driver circuit;

detecting if the voltage level at the output node of the switching element of the inertial load driver circuit is below a negative threshold voltage level; and

controlling at least one current source to provide a current to a second node of the at least one bootstrap charge storage element if the voltage level at the output node of the switching element of the inertial load driver circuit is below the negative threshold voltage level.

Assignments (24)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0535 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0444 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037358/0001 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035033/0001 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035033/0923 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035034/0019 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2014
From: SICARD, THIERRY
To: FREESCALE SEMICONDUCTOR INC.
Reel/Frame 034135/0876 →
Continuity (1)
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