Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
View Patent ↗A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and a difference between a NO 3 − concentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NO 3 − concentration after retaining the aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.
1. A slurry comprising:
an abrasive grain; and
water, wherein
the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and
a difference between a NO 3 − concentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NO 3 − concentration after retaining the aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.
2. The slurry according to claim 1 , wherein the abrasive grain produces absorbance of 1.50 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
3. The slurry according to claim 1 , wherein the abrasive grain produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
4. The slurry according to claim 1 , wherein the abrasive grain produces light transmittance of 95%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
5. The slurry according to claim 1 , wherein the abrasive grain produces absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.
6. The slurry according to claim 1 , wherein the abrasive grain produces absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.
7. The slurry according to claim 1 , wherein a content of the abrasive grain is 0.01 mass % or more based on a total mass of the slurry.
8. The slurry according to claim 1 , wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.
9. The slurry according to claim 1 , wherein the tetravalent metal element is tetravalent cerium.
10. A polishing-liquid set wherein constituent components of a polishing liquid are separately stored as a first liquid and a second liquid such that the first liquid and the second liquid are mixed to form the polishing liquid, the first liquid is the slurry according to claim 1 , and the second liquid comprises an additive and water.
11. The polishing-liquid set according to claim 10 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.
12. The polishing-liquid set according to claim 10 , wherein a content of the additive is 0.01 mass % or more based on a total mass of the polishing liquid.
13. A base substrate polishing method comprising:
a step of arranging a base substrate having material to be polished on its surface so that the material to be polished is opposed to a polishing pad; and
a step of polishing at least a part of the material to be polished by supplying the slurry according to claim 1 between the polishing pad and the material to be polished.
14. A base substrate polishing method comprising:
a step of arranging a base substrate having a material to be polished on its surface so that the material to be polished is opposed to a polishing pad;
a step of obtaining the polishing liquid by mixing the first liquid and the second liquid of the polishing-liquid set according to claim 10 ; and
a step of polishing at least a part of the material to be polished by supplying the polishing liquid between the polishing pad and the material to be polished.
15. The polishing method according to claim 14 , wherein the material to be polished includes silicon oxide.
16. The polishing method according to claim 14 , wherein irregularities are formed on a surface of the material to be polished.
17. A base substrate polished by the polishing method according to claim 14 .
18. A base substrate polishing method comprising:
a step of arranging a base substrate having a material to be polished on its surface so that the material to be polished is opposed to a polishing pad; and
a step of polishing at least a part of the material to be polished by supplying each of the first liquid and the second liquid of the polishing-liquid set according to claim 10 between the polishing pad and the material to be polished.
19. The polishing method according to claim 18 , wherein the material to be polished includes silicon oxide.
20. The polishing method according to claim 18 , wherein irregularities are formed on a surface of the material to be polished.
21. A base substrate polished by the polishing method according to claim 18 .
22. A polishing liquid comprising:
an abrasive grain;
an additive; and
water, wherein
the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and
a difference between a NO 3 − concentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NO 3 − concentration after retaining the aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.
23. The polishing liquid according to claim 22 , wherein the abrasive grain produces absorbance of 1.50 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
24. The polishing liquid according to claim 22 , wherein the abrasive grain produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
25. The polishing liquid according to claim 22 , wherein the abrasive grain produces light transmittance of 95%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.
26. The polishing liquid according to claim 22 , wherein the abrasive grain produces absorbance of 1.000 or more for light having a wavelength of 290 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.
27. The polishing liquid according to claim 22 , wherein the abrasive grain produces absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 0.0065 mass %.
28. The polishing liquid according to claim 22 , wherein a content of the abrasive grain is 0.01 mass % or more based on a total mass of the polishing liquid.
29. The polishing liquid according to claim 22 , wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.
30. The polishing liquid according to claim 22 , wherein the tetravalent metal element is tetravalent cerium.
31. The polishing liquid according to claim 22 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.
32. A base substrate polishing method comprising:
a step of arranging a base substrate having a material to be polished on its surface so that the material to be polished is opposed to a polishing pad; and
a step of polishing at least a part of the material to be polished by supplying the polishing liquid according to claim 22 between the polishing pad and the material to be polished.
33. The polishing method according to claim 32 , wherein the material to be polished includes silicon oxide.
34. The polishing method according to claim 32 , wherein irregularities are formed on a surface of the material to be polished.
35. A base substrate polished by the polishing method according to claim 32 .
36. The polishing liquid according to claim 22 , wherein a content of the additive is 0.01 mass % or more based on a total mass of the polishing liquid.
37. The polishing method according to claim 13 , wherein the material to be polished includes silicon oxide.
38. The polishing method according to claim 13 , wherein irregularities are formed on a surface of the material to be polished.
39. A base substrate polished by the polishing method according to claim 13 .