Thin film transistor, array substrate and method for fabricating the same, and display device
A thin film transistor, an array substrate and a method for fabricating the array substrate, and a display device are disclosed. The thin film transistor comprises a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer provided on a base substrate, and comprises: a first transparent electrode provided between the source electrode and the semiconductor active layer, corresponding to the source electrode and in direct contact with the source electrode; a second transparent electrode provided between the drain electrode and the semiconductor active layer, corresponding to the drain electrode and in direct contact with the drain electrode, the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer.
1. An array substrate, comprising thin film transistors and pixel electrodes electrically connected to drain electrodes of the thin film transistors, each thin film transistor comprising a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer which are provided on a base substrate, wherein
the gate electrode, the gate insulation layer and the semiconductor active layer are sequentially provided on the base substrate from bottom to top,
the thin film transistor further comprises: a first transparent electrode that is provided between the source electrode and the semiconductor active layer, corresponds to the source electrode and is in direct contact with the source electrode; a second transparent electrode that is provided between the drain electrode and the semiconductor active layer, corresponds to the drain electrode and is in direct contact with the drain electrode; and a third transparent electrode that is provided between the gate insulation layer and the gate electrode,
the array substrate further comprises a common electrode line and a common electrode, the common electrode is in direct contact with the common electrode line, the common electrode line and the gate electrode are provided in a same layer, the common electrode and the third transparent electrode are provided in a same layer,
wherein the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, and the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer.
2. The array substrate of claim 1 , wherein each pixel electrode comprises the second transparent electrode of the thin film transistor and a fourth transparent electrode,
the fourth transparent electrode is provided on the same layer as the second transparent electrode and electrically connected to the second transparent electrode, and the fourth transparent electrode comprises a plurality of electrically connected strip-shaped electrodes.
3. The array substrate of claim 1 , wherein the common electrode comprises a plate-shaped electrode.
4. The array substrate of claim 1 , wherein the semiconductor active layer is a metal oxide semiconductor active layer.
5. The array substrate of claim 1 , wherein the first transparent electrode, the second transparent electrode and the third transparent electrode comprise at least one of indium tin oxide, indium zinc oxide and aluminum zinc oxide.
6. A display device, comprising an array substrate, the array substrate comprising thin film transistors and pixel electrodes electrically connected to drain electrodes of the thin film transistors, each thin film transistor comprising a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer which are provided on a base substrate, wherein
the gate electrode, the gate insulation layer and the semiconductor active layer are sequentially provided on the base substrate from bottom to top,
the thin film transistor further comprises: a first transparent electrode that is provided between the source electrode and the semiconductor active layer, corresponds to the source electrode and is in direct contact with the source electrode; a second transparent electrode that is provided between the drain electrode and the semiconductor active layer, corresponds to the drain electrode and is in direct contact with the drain electrode; and a third transparent electrode that is provided between the gate insulation layer and the gate electrode,
the array substrate further comprises a common electrode line and a common electrode, the common electrode is in direct contact with the common electrode line, the common electrode line and the gate electrode are provided in a same layer, the common electrode and the third transparent electrode are provided in a same layer,
wherein the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, and the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer.
7. The display device of claim 6 , wherein each pixel electrode comprises the second transparent electrode of the thin film transistor and a fourth transparent electrode,
the fourth transparent electrode is provided on the same layer as the second transparent electrode and electrically connected to the second transparent electrode, and the fourth transparent electrode comprises a plurality of electrically connected strip-shaped electrodes.
8. The display device of claim 6 , wherein the common electrode comprises a plate-shaped electrode.
9. The display device of claim 6 , wherein the semiconductor active layer is a metal oxide semiconductor active layer.
10. The display device of claim 6 , wherein the first transparent electrode, the second transparent electrode and the third transparent electrode comprise at least one of indium tin oxide, indium zinc oxide and aluminum zinc oxide.