Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
View Patent ↗A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section.
1. A solid-state imaging device comprising:
a semiconductor base;
a photoelectric conversion element provided in the semiconductor base;
a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base;
a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base;
a first film member covering the photoelectric conversion element;
a second film member provided on the first film member, and
a contact plug extending through the second film member, wherein the contact plug is in contact with the contact section.
2. The solid-state imaging device according to claim 1 , wherein the second film member is provided on the semiconductor base in an inter-pixel region.
3. The solid-state imaging device according to claim 1 , further comprising a third film member on the semiconductor base in an inter-pixel region between the photoelectric conversion elements adjacent to each other, the third film member being made of a material different from those of the first film member and the second film member.
4. The solid-state imaging device according to claim 1 , wherein the first film member has a configuration in which different types of film members are laminated.
5. The solid-state imaging device according to claim 1 , wherein the second film member is laminated on the first film member.
6. The solid-state imaging device according to claim 1 , wherein the first film member includes at least one selected from a film having a negative fixed charge, a semiconductor material having a band gap larger than that of the semiconductor base, and a conductive layer.
7. The solid-state imaging device according to claim 1 , wherein the second film member includes at least one selected from a film having a negative fixed charge amount smaller than that of the first film member, a film having an interface state smaller than that of the semiconductor base, and a conductive layer.
8. The solid-state imaging device according to claim 1 , further comprising an embedded-type element separation section around the contact section.
9. The solid-state imaging device according to claim 8 , wherein the first film member is included in the element separation section.
10. The solid-state imaging device according to claim 8 , wherein the second film member is included in a portion, in the element separation section, that is in contact with the contact section.
11. The solid-state imaging device according to claim 1 , wherein a portion of the second film is in contact with the light receiving surface side of the semiconductor base.
12. A method of manufacturing a solid-state imaging device, the method comprising:
a step of forming a photoelectric conversion element and a contact section in a semiconductor base;
a step of forming a first film member on the semiconductor base at a position that covers the photoelectric conversion element;
a step of forming a second film member on the semiconductor base at a position that covers the first film member;
a step of forming a contact plug that extends through the second film member and contacts the contact section; and
a step of forming a photoelectric conversion film on a light receiving surface of the semiconductor base.
13. An electronic apparatus comprising:
a semiconductor unit; and
a signal processing circuit configured to process an output signal of the semiconductor unit,
the semiconductor unit including:
a semiconductor base;
photoelectric conversion element provided in the semiconductor base;
a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base;
a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base;
a first film member covering the photoelectric conversion element;
a second film member provided on the first film member; and
a contact plug extending through the second film member, wherein the contact plug is in contact with the contact section.
14. An electronic apparatus comprising:
a solid-state imaging device; and
a signal processing circuit configured to process an output signal of the solid-state imaging device,
the solid-state imaging device including:
a semiconductor base;
a photoelectric conversion element provided in the semiconductor base;
a first film member provided on the photoelectric conversion element;
a second film member provided on the first film member and on the semiconductor base; and
a contact plug extending through the second film member.