IP Library Granted Patent US 9,627,171
Granted Patent B2
US 9,627,171 · App. 14/410,999 · Granted Apr 18, 2017

Charged particle beam device

Inventors: Hiroshi Makino (Tokyo, JP); Hideyuki Kazumi (Tokyo, JP); Minoru Yamazaki (Tokyo, JP); Yuzuru Mizuhara (Tokyo, JP); Miki Isawa (Tokyo, JP)
Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
H01J37/147H01J37/244H01J37/28H01J2237/2449H01J2237/24485H01J2237/281H01J2237/2806
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Quick Facts
Patent No.
US 9,627,171
App. No.
14/410,999
Granted
Apr 18, 2017
Kind
B2
Abstract

An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.

Claims (21)

1. A charged particle beam device, comprising:

a first deflector which deflects a primary charged particle beam emitted from a charged particle source, so as to change a position of scanning area of the primary charged particle beam;

a detector which detects charged particles emitted from a sample in response to the primary charged particle beam;

a first orthogonal electromagnetic field generator which deflects the charged particles of emitted from the sample to an optical axis of the primary charged particle beam according to a deflection signal from the first deflector, when the first primary charged particle beam is deflected by the first deflector to a different position from the optical axis on the sample;

an aperture forming member which is disposed between the first orthogonal electromagnetic field generator and the charged particle source and has a pass-through aperture for the optical axis of the primary charged particle beam;

a second orthogonal electromagnetic field generator which deflects the charged particles emitted from the sample deflected by the first orthogonal electromagnetic field generator according to the deflection signal, so that the charged particles emitted from the sample deflected by the first orthogonal electromagnetic field generator travel along the optical axis of the first charged particle beam; and

a third orthogonal electromagnetic field generator which deflects the charged particles emitted from the sample passing through the aperture forming member from the optical axis to the detector or a conversion member converting the charged particles into secondary electrons.

2. The charged particle beam device according to claim 1 , wherein the aperture forming member is a conversion plate which generates secondary electrons by collision of the charged particles of the second charged particle beam.

3. The charged particle beam device according to claim 2 , wherein the detector detects electrons emitted from the conversion plate.

4. The charged particle beam device according to claim 1 , wherein the aperture forming member is a detector which detects the charged particles emitted from the sample.

5. The charged particle beam device according to claim 1 , further comprising an aberration corrector which is arranged on a side toward the charged particle source with respect to the third orthogonal electromagnetic field generator.

6. The charged particle beam device according to claim 1 , wherein the first orthogonal electromagnetic field generator and the second orthogonal electromagnetic field generator change deflected states of the charged particles emitted from the sample according to a deflected state of the primary charged particle beam by the first deflector.

7. The charged particle beam device according to claim 6 , wherein the first orthogonal electromagnetic field generator and the second orthogonal electromagnetic field generator deflect the charged particles emitted from the sample to make trajectories of the charged particles emitted from the sample parallel to an ideal optical axis of the primary charged particle beam.

8. A charged particle beam device, comprising:

a first deflector which deflects a first primary charged particle beam emitted from a charged particle source, so as to change a position of scanning area of the primary charged particle beam;

a detector which detects charged particles emitted from a sample in response to the primary charged particle beam;

a first orthogonal electromagnetic field generator which deflects the charged particles emitted from the sample to an optical axis of the primary charged particle beam when the first primary charged particle beam is deflected by the first deflector to a different position from the optical axis on the sample;

a second orthogonal electromagnetic field generator which further deflects the charged particles emitted from the sample deflected by the first orthogonal electromagnetic field generator;

an aperture forming member having a pass-through aperture for the optical axis of the primary charged particle beam;

a third orthogonal electromagnetic field generator which deflects the charged particles emitted from the sample passing through the aperture forming member from the optical axis to the detector or a conversion member converting the charged particles emitted from the sample into secondary electrons; and

a fourth orthogonal electromagnetic field generator which is arranged on a side toward the charged particle source with respect to the third orthogonal electromagnetic field generator, the fourth orthogonal electromagnetic field generator being supplied with a signal to cause aberration which cancels out composite aberration of the first orthogonal electromagnetic field generator, the second orthogonal electromagnetic field generator, and the third orthogonal electromagnetic field generator.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2014
From: MAKINO, HIROSHI; KAZUMI, HIDEYUKI; YAMAZAKI, MINORU; MIZUHARA, YUZURU; ISAWA, MIKI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 034579/0950 →
Priority Claims (1)
JP 2012-144901 · Jun 28, 2012 · national
Continuity (1)
Related Publication 20150357153A1 · Dec 10, 2015