Producing method of encapsulating layer-covered semiconductor element and producing method of semiconductor device
View Patent ↗A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.
1. A method for producing an encapsulating layer-covered semiconductor element comprising:
a disposing step of disposing a semiconductor element on a support,
an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and
a heating step of heating and curing the encapsulating layer after the encapsulating step, wherein
the heating step includes
a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and
a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.
2. The method for producing an encapsulating layer-covered semiconductor element according to claim 1 , wherein
the encapsulating layer after the first heating step has a compressive elastic modulus at 23° C. of 1.20 MPa or more.
3. The method for producing an encapsulating layer-covered semiconductor element according to claim 1 , wherein
the encapsulating layer in the encapsulating step is in a B-stage state of a two-step thermosetting resin composition.
4. The method for producing an encapsulating layer-covered semiconductor element according to claim 1 , wherein
the first temperature has a temperature rising range in which the temperature rises up to the second temperature.
5. The method for producing an encapsulating layer-covered semiconductor element according to claim 1 , wherein
the support is a board and
in the disposing step, the semiconductor element is mounted on the board.
6. A method for producing a semiconductor device comprising the steps of:
producing an encapsulating layer-covered semiconductor element and
mounting the encapsulating layer-covered semiconductor element on a board, wherein
the encapsulating layer-covered semiconductor element is produced by a method for producing a semiconductor device, wherein
the method for producing an encapsulating layer-covered semiconductor element comprises:
a disposing step of disposing a semiconductor element on a support,
an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and
a heating step of heating and curing the encapsulating layer after the encapsulating step, and
the heating step includes
a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and
a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.