Spin-polarized light-emitting diodes based on organic bipolar spin valves
Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.
1. An organic bipolar spin valve device, comprising:
an organic layer having a first side and a second side;
a ferromagnetic cathode layer coupled to the first side of the organic layer;
a ferromagnetic anode layer directly coupled to the second side of the organic layer; and
a buffer layer positioned between the ferromagnetic cathode layer and the first side of the organic layer and having a thickness between 0.5 and 2 nanometers, wherein the thickness, position, and composition of the buffer layer are configured to improve efficiency of electron injection into the organic layer from the ferromagnetic cathode layer in accordance with an efficiency of hole injection from the ferromagnetic anode layer directly coupled to the second side of the organic layer to thereby balance current density within the organic layer.
2. The device of claim 1 , wherein the device is a spin-polarized light-emitting diode (spin-OLED) that exhibits electroluminescence when a bias voltage is applied across the layers, wherein the buffer layer is configured to reduce a turn-on bias voltage of the device.
3. The device of claim 2 , wherein the device is sensitive to the spin-polarization of carriers (electrons and electron holes) injected from the ferromagnetic electrodes.
4. The device of claim 2 , wherein intensity of electroluminescence may be adjusted by altering a magnetic polarization of one or more of the ferromagnetic cathode layer and the ferromagnetic anode layer.
5. The device of claim 2 , wherein the spin-OLED exhibits magneto-electroluminescence (MEL) of about 1% at the bias voltage (Vb) of about 3.5 volts.
6. The device of claim 1 , further comprising a protective layer on the ferromagnetic cathode layer.
7. The device of claim 6 , wherein the protective layer is composed of a material suitable for providing protection from one of physical damage and chemical damage.
8. The device of claim 1 , wherein the buffer layer comprises a film deposited on the ferromagnetic cathode layer.
9. The device of claim 1 , wherein the ferromagnetic cathode layer is composed of cobalt or a cobalt alloy.
10. The device of claim 1 , wherein the buffer layer enhances injection of spin-aligned electrons from the ferromagnetic cathode layer into the organic layer.
11. The device of claim 1 , wherein the buffer layer is composed of a salt.
12. The device of claim 1 , wherein the buffer layer is composed of lithium fluoride.
13. The device of claim 1 , wherein the organic layer comprises an organic polymer.
14. The device of claim 1 , wherein the organic layer comprises a a π-conjugated organic polymer.
15. The device of claim 1 , wherein the organic layer comprises a deuterated π-conjugated organic polymer.
16. The device of claim 1 , wherein the organic layer comprises deuterated poly(dioctyloxy)phenyl vinylene (D-DOO-PPV).
17. The device of claim 1 , wherein the ferromagnetic anode is composed of LaSrMnO3 (LSMO).
18. The device of claim 17 , wherein the stoichiometry of the LSMO is approximately La0.7Sr0.3MnO3.
19. The device of claim 1 , wherein the ferromagnetic anode layer is attached to a transparent material.
20. The device of claim 19 , wherein the transparent material is a conductive material.
21. The device of claim 20 , wherein the transparent conductive material is composed of strontium tin oxide (STO), indium tin oxide (ITO), or combinations thereof.
22. The device of claim 1 , wherein the ferromagnetic cathode layer and the ferromagnetic anode layer are either made from sufficiently different materials, or have sufficiently different geometries, to allow a magnetization direction of the ferromagnetic cathode to be altered independently of a magnetization direction of the ferromagnetic anode.
23. A spin-organic light-emitting diode (OLED), comprising:
an organic layer comprising a deuterated π-conjugated organic polymer, the organic layer having a first surface and a second surface;
an anode layer on the first surface of the organic layer, the anode layer configured to inject holes directly into the first surface of the organic layer;
a cathode layer on the second surface of the organic layer; and
a buffer layer positioned between the cathode layer and the second surface of the organic layer, wherein a thickness, position, and composition of the buffer layer are configured to balance a current density within the buffer layer by enhancing an efficiency of electron injection from the cathode layer into the second surface of the organic layer while an efficiency of hole injection from the anode layer directly into the first surface of the organic layer remains unchanged.
24. The spin-OLED of claim 23 , wherein:
the cathode layer is disposed on a protective layer composed of aluminum or an aluminum alloy;
the cathode layer is composed of cobalt or a cobalt alloy;
the buffer layer is composed of lithium fluoride;
the organic layer is composed of Deuterated poly(dioctyloxy) phenyl vinylene (D-DOO-PPV); and
the anode layer is composed of LaSrMnO (LSMO).
25. The spin-OLED of claim 23 , wherein the anode layer is attached to a layer of transparent conductive material.
26. The spin-OLED of claim 25 , wherein the transparent conductive material is composed of strontium tin oxide (STO), indium tin oxide (ITO), or combinations thereof.
27. The spin-OLED of claim 23 , wherein a magnetization direction of one or more of the anode layer and the cathode layer are independently alterable in response to subjecting the spin-OLED to an external magnetic field.
28. An apparatus, comprising:
an organic bipolar spin valve, comprising a plurality of layers, comprising;
a first layer,
a second layer comprising a ferromagnetic cathode,
a third layer comprising a buffer having a thickness between 0.5 and 2 nanometers,
an fourth layer comprising an organic layer having a first side and a second side, and
a fifth layer comprising a ferromagnetic anode in direct contact with the first side of the organic layer;
wherein the organic spin-valve is configured to emit electroluminescent light in response to a bias voltage, the bias voltage to cause the ferromagnetic cathode to inject electrons into the second side of the organic layer through the buffer, and to cause the ferromagnetic anode to inject holes directly into the first side of the organic layer at a hole injection rate; and
wherein the thickness, position, and composition of the buffer are configured to increase an electron injection rate at which electrons are injected into the second side of the organic layer from the ferromagnetic cathode while the hole injection rate remains unchanged, the buffer layer configured to increase the electron injection rate to the unchanged hole injection rate to thereby balance a current density within the organic layer.
29. The apparatus of claim 28 , wherein the bias voltage is between about 3.5 volts and 10 volts.
30. The apparatus of claim 28 , wherein the bias voltage is equal to or greater than a turn-on voltage of the organic bipolar spin valve.
31. The apparatus of claim 28 , wherein the organic bipolar spin valve is configured to alter an intensity of the emitted electroluminescent light in response to a magnetic field.