Slips surface based on metal-containing compound
A method of preparing an article having a slippery surface includes providing a metal-containing surface, chemically modifying the metal-containing surface to roughen the metal-containing surface, and disposing a lubricating layer on the roughened metal-containing surface, wherein the lubricating layer is substantially stabilized on the roughened metal-containing surface.
1. A method of preparing an article having a slippery surface, comprising:
providing a metal-containing surface;
chemically modifying the metal-containing surface to roughen the metal-containing surface;
functionalizing the roughened metal-containing surface to enhance affinity of the roughened metal-containing surface to the lubricating layer; and
disposing a lubricating layer on the functionalized, roughened metal-containing surface, wherein the lubricating layer is substantially stabilized on the roughened metal-containing surface,
wherein the functionalizing step comprises exposing the roughened metal-containing surface to at least one organic derivative in the form of (T) n -A-(R) a (OR) b (O) c (H) d (OH) e , where
T is a terminal functional group to be exposed on the surface;
A is a center atom selected from B, C, N, Si, P, S; R is an alkyl group;
OR is an alkoxy group;
O is an oxygen or sulfur double bonded to the center atom A;
H is a hydrogen;
OH is a hydroxyl group or thiol group or a secondary amine group that is double bonded to the center atom;
the subscripts n, a, b, c, d, e are integers equal to or greater than zero; and
the sum of the subscripts n, a, b, c, d, e matches with the oxidation number of the center atom.
2. The method of claim 1 , wherein the metal is selected from the group of Li, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a combination thereof.
3. The method of claim 1 , wherein the metal-containing surface contains aluminum and the roughened metal-containing surface contains boehmite.
4. The method of claim 1 , wherein the providing step comprises providing a substantially pure metal or metal alloy substrate.
5. The method of claim 1 , wherein the providing step comprises depositing a metal-containing thin film on an arbitrary substrate to form the metal-containing surface.
6. The method of claim 1 , wherein the providing step comprises depositing a metal-containing sol-gel precursor on a substrate to form the metal-containing surface.
7. The method of claim 6 , wherein the metal-containing sol-gel precursor contains a porogen.
8. The method of claim 7 , further comprising removing the porogen from the metal-containing surface after the metal-containing sol-gel precursor is deposited on the substrate.
9. The method of claim 6 , further comprising pre-treating the substrate to improve adhesion of the substrate to the metal-containing sol-gel layer.
10. The method of claim 9 , wherein the pre-treating step comprises plasma treating the substrate.
11. The method of claim 9 , wherein the pre-treating step comprises treating the substrate with strong oxidizer.
12. The method of claim 9 , wherein the pre-treating step comprises applying an adhesion promoter to the substrate.
13. The method of claim 12 , wherein the adhesion promoter comprises dopamine or polydopamine.
14. The method of claim 12 , wherein the adhesion promoter comprises Ti or Cr.
15. The method of claim 6 , wherein the metal-containing sol-gel precursor is photo-curable.
16. The method of claim 6 , wherein the metal-containing sol-gel precursor is a sol-gel alumina precursor and the roughened metal-containing surface comprises boehmite.
17. The method of claim 1 , wherein the chemically modifying step comprises reacting the metal-containing surface with an environment to form a porous metal-containing compound layer.
18. The method of claim 17 , wherein the porous metal-containing compound layer has a thickness in the range of 10 nm-1000 μm.
19. The method of claim 17 , wherein the porous metal-containing compound layer is optically transparent.
20. The method of claim 19 , wherein the porous metal-containing compound layer is optically transparent in 200 nm-400 nm wavelength.
21. The method of claim 19 , wherein the porous metal-containing compound layer is optically transparent in 400 nm-700 m wavelength.
22. The method of claim 19 , wherein the porous metal-containing compound layer is optically transparent in 700 nm-1000 nm wavelength.
23. The method of claim 17 , wherein the porous metal-containing compound layer contains compound selected from the group of metal oxides, metal hydroxides, metal oxy-hydroxides, metal salts, organic and inorganic acids, metal sulfides, metal selenides, metal tellurides, metal nitrides, metal phosphides, metal antimonides, metal arsenides, organometallic or coordination compounds, and a mixture thereof.
24. The method of claim 17 , wherein the porous metal-containing compound layer contains metal oxide nanorods, nanotubes, nanofibers, or nanowires.
25. The method of claim 17 , wherein the porous metal-containing compound layer contains pure or mixed metal fatty acid salts, metal-carboxylates, or metal-organophosphonates.
26. The method of claim 17 , wherein the porous metal-containing compound layer contains tungsten oxide.
27. The method of claim 1 , wherein the chemically modifying step comprises at least one of solvolysis and heat treatment to generate the roughened metal-containing surface.
28. The method of claim 27 , wherein the solvolysis includes hydrolysis, alcoholysis, acid-based reaction, alkaline-based reaction, oxidation reaction, hydrothermal reaction, or solvothermal reaction.
29. The method of claim 28 , wherein the acid-based reaction uses at least one of an organic acid or a inorganic acid.
30. The method of claim 1 , wherein the at least one organic derivative is thiols, silanes, sulfonic acids, carboxylic acids, phosphonic acids, phosphinic acids, phosphoric acids, or esters thereof.