Method for manufacturing array substrate, array substrate thereof and display device
The present disclosure provides a method for manufacturing an array substrate, an array substrate and a display device. The method includes: forming a gate line, a gate electrode and an insulating layer which covers the gate line and the gate electrode on a first surface of a substrate; forming a semiconductive film on the insulating layer; patterning the semiconductive film using the gate electrode and the gate line as a mask, so as to form an source semiconductive layer at a region where the gate line and the gate electrode are located; and manufacturing a target semiconductive layer using the source semiconductive layer.
1. A method for manufacturing an array substrate, comprising the steps of:
forming a gate line, a gate electrode and a gate insulating layer which covers the gate line and the gate electrode on a first surface of a base substrate;
forming a semiconductive film on the gate insulating layer;
patterning the semiconductive film using the gate electrode and the gate line as a mask, so as to form a source semiconductive layer, wherein a projection of a pattern of the source semiconductive layer onto the base substrate is within a region of a projection of the gate electrode and the gate line onto the base substrate; and
manufacturing a target semiconductive layer using the source semiconductive layer;
wherein the patterning the semiconductive film using the gate electrode and the gate line as a mask so as to form a source semiconductive layer comprises:
forming a positive photoresist film on the base substrate provided with the semiconductive film;
exposing the positive photoresist film from a second surface opposite to the first surface of the base substrate;
developing the exposed positive photoresist film, and removing the exposed film outside the region where the gate line and the gate electrode are located, so as to expose the semiconductive film outside the region where the gate line and the gate electrode are located; and
removing the exposed semiconductive film outside the region where the gate line and the gate electrode are located, so as to obtain the source semiconductive layer.
2. The method according to claim 1 , wherein the step of manufacturing the target semiconductive layer using the source semiconductive layer is completed by a single patterning process prior to forming a source/drain electrode film.
3. The method according to claim 2 , wherein the step of manufacturing the target semiconductive layer using the source semiconductive layer comprises:
forming a positive photoresist film on the source semiconductive layer;
exposing the positive photoresist film;
developing the exposed positive photoresist film, and removing the exposed positive photoresist film outside a predetermined region where a thin film transistor and a data line are to be formed, so as to expose the source semiconductive layer outside the predetermined region where the thin film transistor and the data line are to be formed; and
removing the exposed source semiconductive layer outside the predetermined region where the thin film transistor and the data line are to be formed, so as to obtain the target semiconductive layer.
4. The method according to claim 1 , wherein the step of manufacturing the target semiconductive layer using the source semiconductive layer comprises:
forming a positive photoresist film on the source semiconductive layer;
exposing the positive photoresist film;
developing the exposed positive photoresist film, and removing the exposed positive photoresist film outside a predetermined region where a thin film transistor and a data line are to be formed, so as to expose the source semiconductive layer outside the predetermined region where the thin film transistor and the data line are to be formed; and
removing the exposed source semiconductive layer outside the predetermined region where the thin film transistor and the data line are to be formed, so as to obtain the target semiconductive layer.
5. The method according to claim 4 , wherein the step of manufacturing the target semiconductive layer using the source semiconductive layer is completed at the same time with a step of manufacturing the data line and a source/drain electrode of the thin film transistor.
6. The method according to claim 5 , wherein the target semiconductive layer and the source/drain electrode of the thin film transistor are manufactured by a single patterning process through a half masking process.
7. The method according to claim 6 , wherein the step of manufacturing the target semiconductive layer using the source semiconductive layer comprises:
forming a source/drain electrode film on the source semiconductive layer;
removing the source/drain electrode film outside the predetermined region where the thin film transistor and the data line are to be formed, and removing the source semiconductive layer outside the predetermined region where the thin film transistor and the data line are to be formed; and
etching the source/drain electrode film reserved at the predetermined region where the thin film transistor is to be formed, so as to form a source electrode and a drain electrode.
8. The method according to claim 1 , wherein the gate insulating layer is formed by a chemical vapor deposition method.
9. The method according to claim 1 , wherein the semiconductive film is formed on the gate insulating layer by a chemical vapor deposition method.
10. An array substrate manufactured by the method according to claim 1 .
11. An array substrate manufactured by the method according to claim 2 .
12. An array substrate manufactured by the method according to claim 3 .
13. An array substrate manufactured by the method according to claim 4 .
14. An array substrate manufactured by the method according to claim 5 .
15. A display device, comprising the array substrate according to claim 2 .