IP Library › Granted Patent US 9,543,368
Granted Patent B2
US 9,543,368 · App. 14/420,488 · Granted Jan 10, 2017

OLED array substrate having black matrix, manufacturing method and display device thereof

Inventors: Hongfei Cheng (Beijing, CN); Yuxin Zhang (Beijing, CN)
Assignee: BOE TECHNOLOGY GROUP CO., LTD.
H01L27/3272H01L27/322H01L51/5253H01L51/56H01L27/3248H01L51/5284H01L2227/323
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Quick Facts
Patent No.
US 9,543,368
App. No.
14/420,488
Granted
Jan 10, 2017
Kind
B2
Abstract

An OLED array substrate and a manufacturing method thereof, and a display device provided with the OLED array substrate are disclosed. The OLED array substrate includes a plurality of thin film transistors ( 2 ) disposed on a base substrate ( 1 ), each thin film transistor ( 2 ) being provided with a black matrix ( 6 ) thereon, and the black matrix ( 6 ) being provided with a via ( 60 ); over the black matrix ( 6 ) being disposed from bottom to top a first electrode ( 41 ), a luminescent layer ( 43 ) and a second electrode ( 42 ). The first electrode ( 41 ) is connected with the thin film transistor ( 2 ) through the via ( 60 ), and the first electrode ( 41 ) disposed over adjacent thin film transistors ( 2 ) are separated from each other by a barrier ( 44 ). The black matrix can block light emitted by the OLED to prevent TFTs from being illuminated, thereby ensuring the display effect of an active matrix type OLED display device.

Claims (29)

1. An OLED array substrate, comprising: a plurality of thin film transistors disposed on a base substrate, a black matrix disposed over each of thin film transistors, the black matrix being provided with a via;

a first electrode, a luminescent layer, and a second electrode disposed over the black matrix from bottom to top;

a first protection layer, disposed between the first electrode and the thin film transistor; and

a color filter layer, disposed between the first protection layer and the thin film transistor,

wherein the first electrode is connected with the thin film transistor through the via, the first electrodes disposed over adjacent thin film transistors are separated from each other by a barrier, the black matrix and the first protection layer are disposed in a same layer, the black matrix overlaps the color filter layer partially, and the via penetrates a portion where the black matrix overlaps the color filter layer partially.

2. The OLED array substrate of claim 1 , wherein the luminescent layer is color luminescent layer.

3. The OLED array substrate of claim 1 , wherein the luminescent layer is white luminescent layer.

4. The OLED array substrate of claim 3 , wherein a second protection layer is further disposed between the color filter layer and the thin film transistor; and the via further penetrates the second protection layer.

5. The OLED array substrate of claim 1 , wherein the first electrode is anode, and the second electrode is cathode; or

the first electrode is cathode, and the second electrode is anode.

6. The OLED array substrate of claim 1 , wherein the luminescent layers disposed over adjacent thin film transistors are separated from each other by the barrier.

7. The OLED array substrate claim 1 , wherein the barrier is disposed in a projection area of the black matrix onto the base substrate.

8. A display device, comprising the OLED array substrate of 1.

9. The OLED array substrate of claim 1 , wherein a second protection layer is further disposed between the color filter layer and the thin film transistor; and the via further penetrates the second protection layer.

10. The OLED array substrate of claim 1 , wherein the color filter layer includes color filters with different colors, and adjacent color filters with different colors are contacted with each other.

11. A method of manufacturing an OLED array substrate, comprising:

forming a pattern comprising a plurality of thin film transistors on a base substrate;

forming a pattern comprising a color filter layer below a black matrix;

forming a pattern comprising both a first protection layer and the black matrix, wherein the first protection layer and the black matrix are disposed in a same layer, the black matrix being located over each thin film transistor and provided with a via, the the black matrix overlaps the color filter layer partially, and the via penetrates a portion where the black matrix overlaps the color filter layer partially; and

forming a pattern on the black matrix, the pattern comprising a first electrode, a barrier, a luminescent layer, and a second electrode, wherein the first electrode is connected with the thin film transistor through the via, and the first electrodes disposed over adjacent thin film transistors are separated from each other by the barrier.

12. The method of claim 11 , wherein the luminescent layer is color luminescent layer.

13. The method of claim 11 , wherein after the step of forming the pattern comprising the plurality of thin film transistors on the base substrate, the method further comprises:

forming a pattern comprising a second protection layer;

wherein the via further penetrates the second protection layer.

14. The method of claim 11 , wherein the first electrode is anode, and the second electrode is cathode; or

the first electrode is cathode, and the second electrode is anode.

15. The method of 11 , wherein the luminescent layers formed over adjacent thin film transistors are separated from each other by the barrier.

16. The method of 11 , wherein the barrier is disposed in a projection area of the black matrix onto the base substrate.

17. The method of claim 11 , wherein the color filter layer includes color filters with different colors, and adjacent color filters with different colors are contacted with each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 9, 2015
From: CHENG, HONGFEI; ZHANG, YUXIN
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 034918/0791 →
Priority Claims (1)
CN 2013 1 0406560 · Sep 9, 2013 · national
Continuity (1)
Related Publication 20150249120A1 · Sep 3, 2015