Laser de-bond carrier wafer from device wafer
In one embodiment, a semiconductor device wafer ( 10 ) contains electrical components and has electrodes ( 28 ) on a first side of the device wafer ( 10 ). A transparent carrier wafer ( 30 ) is bonded to the first side of the device wafer ( 10 ) using a bonding material ( 32 ) (e.g., a polymer or metal). The second side of the device wafer ( 10 ) is then processed, such as thinned, while the carrier wafer ( 30 ) provides mechanical support for the device wafer ( 10 ). The carrier wafer ( 30 ) is then de-bonded from the device wafer ( 10 ) by passing a laser beam ( 46 ) through the carrier wafer ( 30 ), the carrier wafer ( 30 ) being substantially transparent to the wavelength of the beam. The beam impinges on the bonding material ( 32 ), which absorbs the beam's energy, to break the chemical bonds between the bonding material ( 32 ) and the carrier wafer ( 30 ). The released carrier wafer ( 30 ) is then removed from the device wafer ( 10 ), and the residual bonding material is cleaned from the device wafer ( 10 ).
1. A method for forming an electrical structure comprising:
providing a device wafer comprising a first metal layer;
providing a carrier wafer having a first surface bonded to a second metal layer;
bonding the first metal layer to the second metal layer to form a bonded metal layer between the carrier wafer and the device wafer
emitting light through the carrier wafer to impinge on the first surface of the carrier wafer such that bonds between the bonded metal layer and the first surface of the carrier wafer are de-bonded; and
removing the carrier wafer from the bonded metal layer.
2. The method of claim 1 , wherein a wavelength of the light is in a range from approximately ultraviolet (UV) wavelengths and blue wavelengths.
3. The method of claim 1 , wherein the carrier wafer comprises sapphire.
4. The method of claim 1 , wherein the carrier wafer comprises SiC.
5. The method of claim 1 , further comprising:
processing a side of the device wafer opposite the first metal layer while the carrier wafer is joined to the device wafer.
6. The method of claim 5 , further comprising:
bonding an additional device wafer to the device wafer, such that one or more conductive vias in the device wafer are in contact with electrodes on the additional device wafer.
7. The method of claim 6 , further comprising providing one or more light emitting diodes (LEDs) via the additional device wafer.
8. The method of claim 7 , further comprising providing transient voltage suppression (TVS) circuitry for the one or more LEDs.
9. The method of claim 1 , further comprising providing one or more light emitting diodes (LEDs) via the device wafer.
10. The method of claim 1 , further comprising:
removing the bonded metal layer from the first surface of the device wafer.
11. The method of claim 1 , further comprising:
removing one or more portions of the bonded metal layer to form electrodes on the first surface of the device wafer.
12. The method of claim 1 , wherein a wavelength of the light is approximately 193 nm.
13. The method of claim 1 , wherein the light has an intensity of approximately 800 mJ/cm 2 .
14. The method of claim 1 , wherein the bonds between the bonded metal layer and the first surface of the carrier wafer are formed by a benzocyclobutene (BCB) polymer adhesive.
15. A method for forming an electrical structure comprising:
forming a first metal layer on a first side of a device wafer;
forming a second metal layer on a first side of a carrier wafer;
joining the carrier wafer to the device wafer by bonding the first metal layer to the second metal layer to create a single bonded metal layer with a first surface of the bonded metal layer in contact with the first side of the device wafer and a second surface of the bonded metal layer in contact with the first side of the carrier wafer;
emitting a light from the light source through the carrier wafer to impinge on the second surface of the bonded metal layer and de-bond bonds between the bonded metal layer and the carrier wafer; and
removing the carrier wafer from the bonded metal layer.
16. The method of claim 15 further comprising processing a second side of the device wafer, opposite the first side, while the carrier wafer is joined to the device wafer.