PROCESSING ARRANGEMENT WITH TEMPERATURE CONDITIONING ARRANGEMENT AND METHOD OF PROCESSING A SUBSTRATE
A substrate processing arrangement exhibits a thermal cavity with two reflective surfaces and a carbon heater for effectively heating substrates to temperatures of 750° C. and more. It has been shown, that even substrates with low absorption properties in the infrared part of the spectrum (glas, silicon, sapphire) can be effectively heated by “sandwiching” a substrate and a heating element between two reflective surfaces, which can be established by a mirror and the target of a PVD source.
1 . A substrate processing arrangement exhibiting a temperature conditioning arrangement including a thermal cavity with two reflective surfaces, said thermal cavity essentially comprising:
a base ( 19 ) with an extended, essentially plane surface,
an essentially planar heating element ( 15 ) mounted above said base ( 19 ) in a plane parallel and distant to and facing the surface of base ( 19 )
a substrate support ( 14 ) construed to carry a substrate ( 17 ) at its periphery, said substrate ( 17 ) being spaced apart from, but facing directly the heating element with one of its surfaces during operation
wherein
a heat reflecting surface or mirror 18 is arranged on the surface of base 19 ;
a second reflecting means is arranged in a further plane parallel to the substrate and heating element on the other side of the substrate support ( 14 ) such that during operation substrate ( 17 ) is directly facing said reflecting means with another of its surfaces;
and no further clamping means exist to hold substrate ( 17 ) in place on substrate support ( 14 ) during operation.
2 . A substrate processing arrangement according to claim 1 , wherein heat reflecting surface or mirror ( 18 ) comprises a nickel coating or a nickel plate mounted to base ( 19 ).
3 . A substrate processing arrangement according to claim 1 and/or 2 , characterized in that said second reflecting means is a source of treatment material or target ( 11 ) of a physical vapour deposition source.
4 . A substrate processing arrangement according to claim 1 and/or 2 , characterized in that said second reflecting means is a showerhead or processing gas inlet of a CVD or PECVD source.
5 . A substrate processing arrangement according to claims 1 - 4 , wherein said second reflecting means' material comprises Al, Ti, Ag, Ta, and their alloys and Ni.
6 . A substrate processing arrangement according to claims 1 - 5 , wherein the distance between the plane of heating element ( 15 ) and the plane where substrate ( 17 ) is arranged during operation amounts to between 5-20 mm.
7 . A substrate processing arrangement according to claims 1 - 6 , characterized in that substrate support ( 14 ) is designed as ring-shaped bearing area or selective support at the circumference of the substrate.
8 . A substrate processing arrangement according to claims 1 - 7 , wherein the target-substrate distance TSD between the plane of the substrate ( 17 ) during operation and second reflecting means or target ( 11 ) respectively is being chosen to range from 4-10 cm.
9 . A substrate processing arrangement according to claim 8 , wherein the TSD is between 5-8 cm.
10 . A substrate processing arrangement according to claims 1 - 9 , characterized by a shield ( 13 ) arranged between second reflecting means or target ( 11 ) and substrate support ( 14 ), said shield ( 13 ) construed to protect substrate support ( 14 ) from being covered with treatment material while a layer deposited on substrate ( 17 ) is covering the full surface facing target ( 11 ).
11 . A substrate processing arrangement according to claims 1 - 10 , wherein heating element ( 15 ) is a resistive heater.
12 . A substrate processing arrangement according to claims 1 - 10 , wherein heating element ( 15 ) is a radiation type heater.
13 . A substrate processing arrangement according to claims 1 - 10 , wherein heating element ( 15 ) is a carbon heater.
14 . A substrate processing arrangement according to claims 13 , wherein said carbon heater has a double-spiral structure with electrical connectors lying outside.
15 . A substrate processing arrangement according to claims 13 and/or 14 , wherein the electrical connectors are arranged outside the effectively heated substrate area.
16 . A method of treating a substrate in a processing arrangement comprising:
Placing a substrate ( 17 ) on a substrate support ( 14 ) of a substrate processing arrangement according to claim 1 ,
Heating up the substrate to a predefined temperature
Treating the substrate