Silver paste composition and semiconductor device using same
View Patent ↗A silver paste composition comprising silver particles having a particle diameter of 0.1 μm to 20 μm, and a solvent, wherein the above-described solvent comprises a solvent having a boiling point of 300° C. or more.
1. A silver paste composition comprising:
silver particles having a particle diameter of 0.1 μm to 20 μm; and
a solvent component consisting of one or more solvents having a boiling point of 300° C. or more.
2. The silver paste composition according to claim 1 , wherein the silver particles comprise at least one of flaky silver particles and spherical silver particles.
3. The silver paste composition according to claim 1 , wherein one or more of the solvents comprises at least one of an ether bond and an ester bond.
4. A sintered body comprising:
silver sintered particles derived from heating the silver paste composition according to claim 1 at a temperature of less than 300° C., and
having a volume resistivity of 1×10 −4 Ω·cm or less, a thermal conductivity of 30W/m·K or more, and an adhesive strength of 10 MPa or more.
5. A semiconductor device comprising:
a semiconductor element;
a supporting member for mounting the semiconductor element; and
a sintered body derived from the silver paste composition according to claim 1 bonding the semiconductor element to the supporting member.
6. The silver paste composition according to claim 2 , wherein one or more of the solvents comprises at least one of an ether bond and an ester bond.
7. A sintered body comprising:
silver sintered particles derived from heating the silver paste composition according to claim 2 at a temperature of less than 300° C., and
having a volume resistivity of 1×10 −4 Ω·cm or less, a thermal conductivity of 30W/m·K or more, and an adhesive strength of 10 MPa or more.
8. A sintered body comprising:
silver sintered particles derived from heating the silver paste composition according to claim 3 at a temperature of less than 300° C., and
having a volume resistivity of 1×10 −4 Ωcm or less, a thermal conductivity of 30W/m·K or more, and an adhesive strength of 10 MPa or more.
9. A sintered body comprising:
silver sintered particles derived from heating the silver paste composition according to claim 6 at a temperature of less than 300° C., and
having a volume resistivity of 1×10 −4 Ωcm or less, a thermal conductivity of 30W/m·K or more, and an adhesive strength of 10 MPa or more.
10. A semiconductor device comprising:
a semiconductor element;
a supporting member for mounting the semiconductor element; and
a sintered body derived from the silver paste composition according to claim 2 bonding the semiconductor element to the supporting member.
11. A semiconductor device comprising:
a semiconductor element;
a supporting member for mounting the semiconductor element; and
a sintered body derived from the silver paste composition according to claim 3 bonding the semiconductor element to the supporting member.
12. A semiconductor device comprising:
a semiconductor element;
a supporting member for mounting the semiconductor element; and
a sintered body derived from the silver paste composition according to claim 6 bonding the semiconductor element to the supporting member.
13. The silver paste composition according to claim 3 , wherein one or more of the solvents has a hydroxyl group.
14. The silver paste composition according to claim 6 , wherein one or more of the solvents has a hydroxyl group.
15. The silver paste composition according to claim 1 , wherein one or more of the solvents comprises a hydroxyl structure group.
16. The silver paste composition according to claim 2 , wherein one or more of the solvents comprises a hydroxyl structure group.
17. A sintered body comprising:
silver sintered particles derived from heating the silver paste composition according to claim 15 at a temperature of less than 300° C., and
having a volume resistivity of 1×10 −4 Ω·cm or less, a thermal conductivity of 30W/m·K or more, and an adhesive strength of 10 MPa or more.
18. A sintered body comprising:
silver sintered particles derived from heating the silver paste composition according to claim 16 at a temperature of less than 300° C., and
having a volume resistivity of 1×10 −4 Ω·cm or less, a thermal conductivity of 30W/m·K or more, and an adhesive strength of 10 MPa or more.
19. A semiconductor device comprising:
a semiconductor element;
a supporting member for mounting the semiconductor element; and
the sintered body according to claim 17 bonding the semiconductor element to the supporting member.
20. A semiconductor device comprising:
a semiconductor element;
a supporting member for mounting the semiconductor element; and
the sintered body according to claim 18 bonding the semiconductor element to the supporting member.
21. The silver paste composition according to claim 1 , wherein one or more of the solvents has a boiling point of 305° C. or more.
22. A silver paste composition comprising:
metal containing materials consisting of silver particles having a particle diameter of 0.1 μm to 20 μm; and
a solvent component consisting of one or more solvents having a boiling point of 300° C. or more.
23. A silver paste composition consisting of:
silver particles having a particle diameter of 0.1 μm to 20 μm; and
one or more solvents having a boiling point of 300° C. or more.
24. The silver paste composition according to claim 23 , wherein the one or more solvents has a boiling point of more than 300° C.
25. The silver paste composition according to claim 22 , wherein the solvent component consists of one or more solvents having a boiling point of more than 300° C.
26. The silver paste composition according to claim 1 , wherein the solvent component consists of one or more solvents having a boiling point of more than 300° C.