IP Library Granted Patent US 10,752,514
Granted Patent B2
US 10,752,514 · App. 14/426,281 · Granted Aug 25, 2020

Metal chalcogenide synthesis method and applications

Inventors: Haitao Zhang (Ithaca, NY); Richard D. Robinson (Ithaca, NY)
Assignee: Cornell University
C01G45/00B82Y30/00C01B17/20C01B19/007C01G3/12C01G5/00C01G9/08C01G11/02C01G19/00C01G29/00C01G49/12C09K11/565C09K11/582C09K11/7407C30B7/14C30B29/46C30B29/50C30B29/60C01P2002/60C01P2002/72C01P2002/84C01P2004/04C01P2004/64C01P2006/80
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Quick Facts
Patent No.
US 10,752,514
App. No.
14/426,281
Granted
Aug 25, 2020
Kind
B2
Abstract

A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent).

Claims (18)

1. A synthetic method comprising reacting at a temperature of less than about 150° C. in an organic solvent material comprising a primary organic amine, a metal material, and an ammonium chalcogenide material, to form a metal chalcogenide nanocrystal material, wherein the metal chalcogenide nanocrystal material has a dispersity less than 10 percent.

2. The method of claim 1 wherein the organic solvent material comprises an anhydrous organic solvent material.

3. The method of claim 1 wherein the metal material is selected from the group consisting of a metal oxide, a metal coordination complex and a metal salt.

4. The method of claim 3 wherein the metal material comprises a metal cation selected from the group consisting of Ti, Mn, Fe, Co, Ni, Cu, Zn, Ga, Mo, Ag, Cd, In, Sn, Sb, W, Hg, Pb, and Bi metal cations.

5. The method of claim 3 wherein the metal salt comprises an anion selected from the group consisting of carboxylate, diketonate, halide, perchlorate and amide anions.

6. The method of claim 1 wherein the ammonium chalcogenide is selected from the group consisting of ammonium sulfide, ammonium selenide and ammonium telluride.

7. The method of claim 1 wherein the reacting is undertaken at a temperature less than about 100 degrees centigrade.

8. The method of claim 1 wherein the reacting is undertaken at a temperature less than about 50 degrees centigrade.

9. The method of claim 1 wherein the solvent material further comprises a surfactant material.

10. The method of claim 1 wherein the method comprises a heat-up method.

11. The method of claim 1 where the metal chalcogenide nanocrystal material comprises at least one of a bismuth sulfide material and a silver sulfide material.

12. A synthetic method comprising reacting in an anhydrous organic solvent material comprising an anhydrous primary organic amine at a temperature less than 100 degrees centigrade a metal material and an ammonium chalcogenide material to form a metal chalcogenide nanocrystal material, wherein the reacting produces greater than 30 grams of metal chalcogenide nanocrystal material in a single reaction batch.

13. The method of claim 12 wherein the metal material is selected from the group consisting of a metal oxide, a metal coordination complex and a metal salt.

14. The method of claim 13 wherein the metal material comprises a metal cation selected from the group consisting of Ti, Mn, Fe, Co, Ni, Cu, Zn, Ga, Mo, Ag, Cd, In, Sn, Sb, W, Hg, Pb, and Bi metal cations.

15. The method of claim 13 wherein the metal salt comprises an anion selected from the group consisting of carboxylate, diketonate, halide, perchlorate and amide anions.

16. The method of claim 12 wherein the ammonium chalcogenide material is selected from the group consisting of ammonium sulfide, ammonium selenide and ammonium telluride.

17. The method of claim 12 wherein the solvent material further comprises a surfactant material.

18. The method of claim 12 wherein the metal chalcogenide nanocrystal material has a dispersity less than 10 percent.

Assignments (3)
CONFIRMATORY LICENSE Recorded Jun 4, 2015
From: CORNELL UNIVERSITY
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 035831/0437 →
CONFIRMATORY LICENSE Recorded Apr 24, 2015
From: CORNELL UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 035499/0025 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2015
From: ZHANG, HAITAO; ROBINSON, RICHARD D.
To: CORNELL UNIVERSITY
Reel/Frame 035122/0858 →
Continuity (2)
Provisional Application 61698066 · Sep 7, 2012
Related Publication 20150225254A1 · Aug 13, 2015