Capacitance type sensor, acoustic sensor, and microphone
A capacitance type sensor has a substrate, a vibration electrode plate formed over the substrate, a back plate formed over the substrate so as to cover the vibration electrode plate, and a fixed electrode plate provided on the back plate so as to be opposite to the vibration electrode plate. At least one of the vibration electrode plate and the fixed electrode plate is separated into a plurality of regions, each of the plurality of regions being formed with a sensing section including the vibration electrode plate and the fixed electrode plate. A barrier electrode is provided between respective sensing sections of at least one adjacent pair of regions of the plurality of regions to prevent signal interference between the respective sensing sections.
1. A capacitance type sensor comprising:
a substrate;
a vibration electrode plate formed over the substrate;
a back plate formed over the substrate so as to cover the vibration electrode plate; and
a fixed electrode plate provided on the back plate so as to be opposite to the vibration electrode plate,
wherein at least one of the vibration electrode plate and the fixed electrode plate is separated into a plurality of regions, each of the plurality of regions being formed with a sensing section including the vibration electrode plate and the fixed electrode plate, and
wherein a barrier electrode is provided between respective sensing sections of at least one adjacent pair of regions of the plurality of regions to prevent signal interference between the respective sensing sections.
2. The capacitance type sensor according to claim 1 ,
wherein the fixed electrode plate is separated into the plurality of regions, and
wherein the barrier electrode is provided between the separated regions of the fixed electrode plate.
3. The capacitance type sensor according to claim 2 , wherein the barrier electrode is located in the same plane as the fixed electrode plate.
4. The capacitance type sensor according to claim 2 , wherein the barrier electrode is made of the same material as the fixed electrode plate.
5. The capacitance type sensor according to claim 2 , wherein the barrier electrode surrounds at least one of the separated regions of the fixed electrode plate.
6. The capacitance type sensor according to claim 1 , wherein the vibration electrode plate is separated into the plurality of regions, the barrier electrode being provided between the separated regions of the vibration electrode plate.
7. The capacitance type sensor according to claim 6 , wherein the barrier electrode is located in the same plane as the vibration electrode plate.
8. The capacitance type sensor according to claim 6 , wherein the barrier electrode is made of the same material as the vibration electrode plate.
9. The capacitance type sensor according to claim 6 , wherein the barrier electrode surrounds at least one of the separated regions of the vibration electrode plate.
10. The capacitance type sensor according to claim 1 , wherein the barrier electrode has conductivity.
11. The capacitance type sensor according to claim 1 , wherein the barrier electrode is held at a reference potential or at the same potential as any one of the vibration electrode plate and the fixed electrode plate.
12. The capacitance type sensor according to claim 1 , wherein the barrier electrode is longer than a length of one side of each of the separated regions of the vibration electrode plate or the fixed electrode plate.
13. The capacitance type sensor according to claim 1 , wherein the end of the barrier electrode is formed in an arc shape.
14. The capacitance type sensor according to claim 2 , wherein insulating stoppers are projected from the barrier electrode toward the vibration electrode plate.
15. The capacitance type sensor according to claim 2 , wherein the insulating stoppers are projected from the region of the fixed electrode plate along the barrier electrode toward the vibration electrode plate.
16. The capacitance type sensor according to claim 2 , wherein a slit-like opening is extended through the barrier electrode and the back plate along a length direction of the barrier electrode.
17. The capacitance type sensor according to claim 2 , wherein the slit-like opening extended through the back plate is provided in the back plate so as to be in parallel with the length direction of the barrier electrode.
18. An acoustic sensor which uses the capacitance type sensor according to claim 1 ,
wherein a plurality of perforations are formed in the back plate and the fixed electrode plate and pass acoustic vibration therethrough,
wherein a signal is outputted from each sensing section according to the change in electrostatic capacitance between the vibration electrode plate which senses the acoustic vibration and the fixed electrode plate.
19. A microphone comprising:
the acoustic sensor according to claim 18 ; and
a circuit which amplifies the signal from the acoustic sensor to output the amplified signal to the outside.