Metal-ceramic substrate and method for producing a metal-ceramic substrate
The invention relates to a metal-ceramic substrate and to a method for the production thereof, the substrate including at least one ceramic layer having first and second surface sides, at least one of the surface sides of which is provided with a metallization, wherein the ceramic material forming the ceramic layer contains aluminum oxide, zirconium dioxide and yttrium oxide. The ceramic layer contains aluminum oxide, zirconium dioxide and yttrium oxide in the following proportions, in each case in relation to the total weight thereof: zirconium dioxide between 2 and 15 percent by weight; yttrium oxide between 0.01 and 1 percent by weight; and aluminum oxide between 84 and 97 percent by weight, wherein the average grain size of the aluminum oxide used is between 2 and 8 micrometers and the ratio of the length of the grain boundaries of the aluminum oxide grains to the total length of all the grain boundaries is greater than 0.6.
1. A metal-ceramic substrate comprising at least one ceramic having first and second surface sides, the at least one ceramic layer being provided with a metallization on at least one of the surface sides, wherein a ceramic material forming the at least one ceramic layer contains aluminium oxide, zirconium dioxide and yttrium oxide, wherein the proportions of the aluminium oxide, the zirconium dioxide, and the yttrium oxide in the at least one ceramic layer are as follows with respect to the total weight thereof:
zirconium dioxide between 2% and 15% by weight;
yttrium oxide between 0.01% and 1% by weight; and
aluminium oxide between 84% and 97% by weight,
wherein an average grain size of the aluminium oxide used is between 2 and 8 micrometers and a ratio of a length of grain boundaries of aluminium oxide grains to a total length of all grain boundaries is greater than 0.6.
2. The metal-ceramic substrate according to claim 1 , wherein the proportions of the aluminium oxide, the zirconium dioxide, and the yttrium oxide in the at least one ceramic layer are as follows with respect to the total weight thereof:
zirconium dioxide between 2% and 10% by weight;
yttrium oxide between 0.01% and 1% by weight; and
aluminium oxide between 89% and 97% by weight.
3. The metal-ceramic substrate according to claim 1 , wherein the at least one ceramic layer comprises a thermal conductivity of more than 25 W/mK.
4. The metal-ceramic substrate according to claim 1 , wherein the at least one ceramic layer comprises a bending strength of more than 500 MPa.
5. The metal-ceramic substrate according to claim 1 , wherein the at least one ceramic layer has a layer thickness between 0.1 mm and 1.0 mm.
6. The metal-ceramic substrate according to claim 1 , wherein the zirconium dioxide in a crystalline phase has a tetragonal crystalline structure, and wherein a proportion of the tetragonal crystalline structure in an overall crystalline structure of the zirconium dioxide is more than 80 percent.
7. The metal-ceramic substrate according to claim 1 , wherein the metallization has a layer thickness between 0.05 mm and 1.2 mm.
8. The metal-ceramic substrate according to claim 1 , wherein the metallization is structured so as to form contact or bonding faces.
9. The metal-ceramic substrate according to claim 1 , wherein the metallization is formed by a layer of copper or a copper alloy and/or a layer of aluminium or an aluminium alloy.
10. A method for production of a metal-ceramic substrate comprising at least one ceramic layer, the at least one ceramic layer having a first and second surface side, comprising the steps of:
bonding at least one of the surface sides with at least one metallization, wherein the at least one ceramic layer is produced from a ceramic material comprising aluminium oxide, zirconium dioxide and yttrium oxide, and
producing the at least one ceramic layer with proportions of the aluminium oxide, the zirconium dioxide and the yttrium oxide with respect to the total weight of the at least one ceramic layer in proportions as follows:
zirconium dioxide between 2% and 15% by weight;
yttrium oxide between 0.01% and 1% by weight; and
aluminium oxide between 84% and 97% by weight; and
utilizing an average grain size of the aluminium oxide between 2 and 8 micrometers and a ratio of a length of grain boundaries of the aluminium oxide grains to a total length of all grain boundaries greater than 0.6.
11. The method according to claim 10 , wherein when forming the at least one metallization in a form of a film or layer of copper or a copper alloy, the at least one metallization is bonded to the ceramic layer by a direct copper bonding process, an active solder process, or by adhesion using a synthetic adhesive or a polymer which is suitable for use as an adhesive.
12. The method according to claim 10 wherein when forming the at least one metallization in the form of a film or layer of aluminium or an aluminium alloy, the at least one metallization is bonded to the ceramic layer by a direct aluminium bonding process or by adhesion using a synthetic adhesive or a polymer which is suitable for use as an adhesive.
13. The method according to claim 10 , wherein in order to produce the at least one ceramic layer zirconium dioxide, a crystalline phase of which has a mainly tetragonal crystalline structure is used, wherein a proportion of tetragonal crystalline structure in an overall crystalline structure of the zirconium dioxide is more than 80 percent.