Semiconductor device and method for manufacturing semiconductor device
A semiconductor device of the present invention includes a substrate having a drift layer, metal wiring formed on an upper surface of the substrate, and an electrode formed on a back surface of the substrate, wherein the lifetime of carriers in the drift layer satisfies the following expression 1: [Expression 1] τ≥1.5×10 −5 exp(5.4×10 3 t N- ) expression 1 τ: the lifetime of carriers in the drift layer t N- : the layer thickness of the drift layer.
1. A semiconductor device comprising:
a substrate having a drift layer;
metal wiring formed on an upper surface of the substrate; and
an electrode formed on a back surface of the substrate,
wherein the lifetime of carriers in the drift layer satisfies the following expression 1:
[Expression 1]
τ≥1.5×10 −5 exp(5.4×10 3 t N- ) expression 1
τ: the lifetime of carriers in the drift layer [sec]
t N- : the layer thickness of the drift layer [m].
2. The semiconductor device according to claim 1 , wherein the substrate is formed of a wide-bandgap semiconductor.
3. The semiconductor device according to claim 2 , wherein the wide-bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond.