Semiconductor device and electronic appliance
The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates. The semiconductor device includes a first semiconductor substrate, a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate, and a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing the interface state of the first semiconductor substrate and the second semiconductor substrate, wherein at least two semiconductor substrates are stacked and the semiconductor substrates are electrically connected to each other, and the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.
1. A semiconductor device comprising:
a first semiconductor substrate;
a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate; and
a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing an interface state of the first semiconductor substrate and the second semiconductor substrate, wherein the interface state of the first semiconductor substrate is lower than the interface state of the second semiconductor substrate,
wherein the first semiconductor substrate and the second semiconductor substrate are stacked and the first semiconductor substrate and the second semiconductor substrate are electrically connected to each other, and
the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein an atom supply film that supplies the dangling bond terminating atom is further inserted between the first semiconductor substrate and the diffusion prevention film.
3. The semiconductor device according to claim 2 , wherein
the dangling bond terminating atom is hydrogen, and
an insulating thin film in the first semiconductor substrate formed by a silicon nitride thin film is used as the atom supply film.
4. The semiconductor device according to claim 1 , wherein the first semiconductor substrate and the second semiconductor substrate are stacked with an atom occlusion film that occludes the dangling bond terminating atom inserted between the diffusion prevention film and the second semiconductor substrate.
5. The semiconductor device according to claim 4 , wherein
the dangling bond terminating atom is hydrogen, and
barrier metal covering a multilayer wiring layer or an extraction electrode in the second semiconductor substrate, which is formed of titanium, is used as the atom occlusion film.
6. The semiconductor device according to claim 1 , wherein
the device is structured as a solid-state imaging device, and
a pixel portion is provided for the first semiconductor substrate and a logic circuit is provided for the second semiconductor substrate.
7. The semiconductor device according to claim 6 , further comprising a third semiconductor substrate provided with a memory circuit, wherein
the second semiconductor substrate is provided between the first semiconductor substrate and the third semiconductor substrate, and
the first semiconductor substrate to the third semiconductor substrate are stacked with the diffusion prevention film that prevents diffusion of the dangling bond terminating atom further inserted between an interface of the second semiconductor substrate and an interface of the third semiconductor substrate.
8. The semiconductor device according to claim 1 , wherein the diffusion prevention film is a SiN film formed by plasma CVD.
9. The semiconductor device according to claim 1 , wherein
the diffusion prevention film is formed on a support substrate by a film formation process at 600° C. or more,
the diffusion prevention film formed on the support substrate and the second semiconductor substrate are bonded to each other and the support substrate is polished to be removed, and
the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between the interface of the first semiconductor substrate and the interface of the second semiconductor substrate.
10. The semiconductor device according to claim 9 , wherein the diffusion prevention film is a SiN film formed by LP-CVD.
11. The semiconductor device according to claim 9 , wherein the diffusion prevention film has a film density of 2.7 g/cm to 3.5 g/cm.
12. The semiconductor device according to claim 9 , wherein the diffusion prevention film has a thickness of 150 nm or less.
13. The semiconductor device according to claim 9 , wherein the diffusion prevention film is a SiN film formed by ALD-CVD.
14. The semiconductor device according to claim 1 , wherein the first semiconductor substrate and the second semiconductor substrate are stacked with their multilayer wiring layers facing each other.
15. The semiconductor device according to claim 1 , wherein the first semiconductor substrate and the second semiconductor substrate are stacked with their multilayer wiring layers not facing each other.
16. An electronic appliance comprising:
a first semiconductor substrate;
a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate; and
a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing the interface state of the first semiconductor substrate and the second semiconductor substrate, wherein the interface state of the first semiconductor substrate is lower than the interface state of the second semiconductor substrate,
wherein the first semiconductor substrate and the second semiconductor substrate are stacked and the first semiconductor substrate and the second semiconductor substrate are electrically connected to each other, and
the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.