Excitonic energy transfer to increase inorganic solar cell efficiency
View Patent ↗The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E G ), and an organic sensitizing window layer disposed on the inorganic subcell. In one aspect, the organic sensitizing window layer comprises a singlet fission material. In another aspect, the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, where the singlet fission host exhibits an excitation triplet energy (E T-SF ) greater than or equal to an excitation triplet energy (E T-PE ) exhibited by the phosphorescent emitter dopant.
1. A photosensitive optoelectronic device comprising:
two electrodes;
an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E G ); and
an organic sensitizing window layer disposed on the inorganic subcell, wherein the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, the singlet fission host exhibiting an excitation triplet energy (E T-SF ) greater than or equal to an excitation triplet energy (E T-PE ) exhibited by the phosphorescent emitter dopant.
2. The device of claim 1 , wherein the singlet fission host exhibits an absorptivity of light of at least 10 3 cm −1 at one or more wavelengths ranging from 300 to 700 nm.
3. The device of claim 1 , wherein the singlet fission host has an excitation singlet energy (E S-SF ) greater than 2.0 eV.
4. The device of claim 1 , wherein the phosphorescent emitter dopant emits radiation at one or more wavelengths in the red/NIR spectral region.
5. The device of claim 4 , wherein the phosphorescent emitter dopant exhibits highest phosphorescence efficiency in the red/NIR spectral region.
6. The device of claim 1 , wherein the phosphorescent emitter emits radiation at an energy greater than or equal to the band gap energy (E G ).
7. The device of claim 1 , wherein the singlet fission host is chosen from polyacenes, rylenes, rubrenes, and biradicaloids.
8. The device of claim 7 , wherein the polyacenes are anthracene, tetracene, pentacene, and derivatives thereof, and the biradicaloids are benzofurans.
9. The device of claim 1 , wherein the phosphorescent emitter dopant comprises a material chosen from metal porphyrins and phthalocyanines.
10. The device of claim 9 , wherein the metal porphyrins are platinum porphyrins.
11. The device of claim 10 , wherein the platinum porphyrins are platinum tetraphenyl-tetrabenzo-porphyrin (PtTPBP), tetraphenyltetranaptho platinum porphyrin (PtTPNP), tetraphenyltetraanthro platinum porphyrin (PtANP), platinum-diphenyltetranaptho-porphyrin (PtDPNP), and derivatives thereof.