Deposition of metal films based upon complementary reactions

1. A method for forming a metal, the method comprising:

contacting a compound having formulae 1 or a surface modified with the compound having formula 1 with a compound having formula ML o to form a metal:

[M(Si(R 0 ) 3 ) m )L 1 ) p ] n   1

wherein

M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal;

R 0 are each independently H or C 1 -C 6 alkyl;

R″ are each independently H or C 1 -C 6 alkyl;

m is an integer from 1 to 6;

n is a number representing formation of aggregates or polymeric material;

L is a ligand;

L 1 is a neutral donor ligand;

p is an integer from 0 to 6; and

o is an integer representing the number of ligands bonded to ML o .

2. The method of claim 1 wherein n is a number from 1 to 1000.

3. The method of claim 1 wherein n is a number from 1 to 3.

4. The method of claim 1 wherein the compound having formula 1 is:

[Cu(Si(R 0 ) 3 )(L 1 ) p ] n .

5. The method of claim 1 wherein L is tBuNNCHCHNMe 2 .

6. The method of claim 1 wherein R 0 is methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, or t-butyl.

7. The method of claim 1 wherein ML o is:

where M is Cu, Ni, Co, or Cr; and

R, R′ are each independently C 1 -C 6 alkyl.

8. The method of claim 1 wherein ML o is:

where M is Mn or Fe.

9. The method of claim 1 wherein ML o is:

where R, R′ are each independently C 1 -C 6 alkyl.

10. The method of claim 1 wherein ML o is:

11. The method of claim 1 wherein ML o is:

where R, R′ are each independently C 1 -C 6 alkyl.

12. The method of claim 1 wherein ML o is:

where R, R′ are each independently C 1 -C 6 alkyl.

13. The method of claim 1 wherein ML o is:

14. The method of claim 1 wherein ML o is:

where M is Ni, Co, Fe, Mn, or Cr.

15. The method of claim 1 wherein ML o is

where M is Ni, Co, Fe, Mn, or Cr.

16. The method of claim 1 wherein ML o is:

where M is Ni, Co, Fe, Mn, or Cr.

17. The method of claim 1 wherein ML o is:

where M is Ni, Co, Fe, Mn, or Cr; and

R, R′ are each independently C 1 -C 6 alkyl.

18. The method of claim 1 wherein the compound having formula 1 is reacted with ML o in the liquid phase.

19. The method of claim 1 wherein the compound having formula 1 is reacted with ML o in a deposition cycle comprising

a) contacting a substrate with a vapor of the compound having formula 1; and

b) contacting the substrate with a vapor of ML o .

20. The method of claim 19 wherein the deposition cycle is repeated 1 to 5000 times.

21. The method of claim 19 wherein the substrate is at a temperature from about 0 to 1000° C.

22. The method of claim 19 wherein the substrate is contacted with a purge gas after step a) and prior to step b) and after step b).

23. The method of claim 1 wherein the compound having formula 1 is reacted with ML o in a deposition cycle comprising

a) contacting a substrate with a vapor of ML o ; and

b) contacting the substrate with a vapor of the compound having formula 1.

24. The method of claim 23 wherein the deposition cycle is repeated 1 to 5000 times.

25. The method of claim 23 wherein the substrate is at a temperature from about 0 to 1000° C.

26. The method of claim 23 wherein the substrate is contacted with a purge gas after step a) and prior to step b) and after step b).

27. The method of claim 1 wherein L is C 1-6 alkyl, Cl, Br, or I.

28. The method of claim 27 wherein M is Zn.

29. The method of claim 1 wherein the compound having formula 1 reacts with ML o to form a compound having formula 29 prior to formation of metal:

and

L is Cl, Br, or I.

30. The method of claim 29 wherein the compound having formula 1 reacts with ML o to form a compound having formula 30 prior to formation of metal:

31. The method of claim 1 wherein M is T, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, or Au.

32. The method of claim 1 wherein M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, or Al.