Spintronic device
Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.
1. A device, comprising:
a substrate; and
a layer disposed over the substrate, wherein the layer comprises at least one monolayer of crystals comprising a Group IV element or a III-V compound, wherein the crystals comprise a hexagonal lattice structure comprising atomic bonds that are buckled.
2. The device of claim 1 , wherein the substrate comprises at least one of an insulator and a semiconductor.
3. The device of claim 1 , wherein the Group IV element is one of Si, Ge, Sn, and Pb.
4. The device of claim 1 , wherein the crystals comprise Si.
5. The device of claim 1 , wherein the crystals comprise a larger spin-orbit coupling (SOC) than graphene.
6. The device of claim 1 , wherein the crystals have a lattice arrangement comprising broken inversion symmetry when subjected to an external electric field.
7. The device of claim 1 , wherein the device is a spin filter.
8. The device of claim 1 , wherein the device is a spin separator.
9. A spintronic device, comprising:
a substrate; and
a layer disposed over the substrate, wherein the layer comprises at least one monolayer of crystals comprising at least one of Si, Ge, Sn, and Pb or a III-V compound,
wherein the spintronic device is robust against at least one of weak disorder and edge imperfections.
10. The spintronic device of claim 9 , wherein the spintronic device is a spin filter configured to generate a spin-polarization level that is at least 99%.
11. The spintronic device of claim 9 , wherein the spintronic device is a three-terminal spin/valley separator configured to generate spin-polarized currents with opposite spins at two output terminals of the spin/valley separator.
12. The spintronic device of claim 9 , wherein the spintronic device is a part of a logical circuit configured to operate beyond binary operations.
13. A device, comprising, a substrate; and
a layer disposed over the substrate, wherein the layer comprises at least one monolayer of crystals comprising a Group IV element or a III-V compound, and wherein the layer comprises a quantum point contact (QPC).
14. The device of claim 13 , wherein the substrate comprises at least one of an insulator and a semiconductor.
15. The device of claim 13 , wherein the Group IV element is one of Si, Ge, Sn, and Pb.
16. The device of claim 13 , wherein the crystals comprise Si.
17. The device of claim 13 , wherein the crystals comprise a larger spin-orbit coupling (SOC) than graphene.
18. The device of claim 13 , wherein the crystals have a lattice arrangement comprising broken inversion symmetry when subjected to an external electric field.
19. The device of claim 13 , wherein the device is a spin filter.
20. The device of claim 13 , wherein the device is a spin separator.