Charged particle beam device and sample preparation method
Provided is a charged particle beam device provided with: a charged particle source; an objective lens for focusing a charged particle beam emitted from the charged particle source onto a sample; a detector for detecting a secondary charged particle emitted from the sample; a probe capable of coming into contact with the sample; a gas nozzle for emitting conductive gas to the sample; and a control unit for controlling the drive of the probe and gas emission from the gas nozzle, wherein before bringing the probe into contact with the sample after applying the charged particle beam to the sample to machine the sample, the control unit emits gas toward a machining position from the gas nozzle and applies the charged particle beam to form a conductive film on a machining portion of the sample, and the charged particle beam device is provided with a contact detection unit for determining that the conductive film formed on the machining portion and the probe have come into contact with each other.
1. A charged particle beam device comprising:
a charged particle source;
an objective lens configured to focus a charged particle beam emitted from said charged particle source onto a sample;
a detector configured to detect secondary charged particles to be emitted from said sample;
a probe capable of coming into contact with said sample;
a gas nozzle configured to emit a conductive gas to said sample; and
a control unit configured to control driving of said probe and gas emission from said gas nozzle,
wherein said control unit has a contact detection unit,
wherein after having applied processing by irradiating the charged particle beam to said sample so as to separate a part of said sample as a micro-sample, a conductive film is formed on said micro-sample by emitting the gas from said gas nozzle toward said micro-sample and simultaneously irradiating said charged particle beam prior to fastening one surface of the micro-sample processed by said probe on a sample table, and
wherein said contact detection unit detects electrical conduction between said micro-sample and said sample table.
2. The charged particle beam device according to claim 1 , wherein after having applied the processing for separating a part of said sample as the micro-sample by irradiating said charged particle beam to said sample, said control unit fastens said probe and the processed micro-sample, extracts said micro-sample from said sample and fastens one surface of the extracted micro-sample onto the sample table.
3. The charged particle beam device according to claim 2 , comprising a rotation mechanism capable of rotating said probe, and wherein said control unit forms a conductive film on said micro-sample by emitting the from said gas nozzle toward said micro-sample and simultaneously irradiating said charged particle beam in a state of fastening said probe and said micro-sample before and after a rotation operation of said probe performed by said rotation mechanism, and
wherein said contact detection unit detects electrical conduction between said micro-sample and said sample table.
4. A charged particle beam device comprising:
an ion source;
an objective lens configured to focus an ion beam emitted from said ion source onto a sample;
an electron source;
an objective lens configured to focus an electron beam emitted from said electron source onto the sample;
a detector configured to detect secondary charged particles to be emitted from said sample;
a probe capable of coming into contact with said sample;
a gas nozzle configured to emit a conductive gas to said sample; and
a control unit configured to control driving of said probe and gas emission from said gas nozzle,
wherein said control unit has a contact detection unit,
wherein after having applied processing by irradiating the ion beam to said sample so as to separate a part of said sample as a micro-sample, a conductive film is formed on said micro-sample by emitting the gas from said gas nozzle toward said micro-sample and simultaneously irradiating said electron beam prior to fastening one surface of the micro-sample processed by said probe on a sample table, and
wherein said contact detection unit detects electrical conduction between said micro-sample and said sample table.
5. The charged particle beam device according to claim 4 , wherein after having applied the processing for separating a part of said sample as the micro-sample by irradiating said charged particle beam to said sample, said control unit controls said probe so as to fasten said probe and the processed micro-sample, extract said micro-sample from said sample, and fasten one surface of the extracted micro-sample onto the sample table.
6. The charged particle beam device according to claim 5 , comprising a rotation mechanism capable of rotating said probe,
wherein said control unit forms a conductive film on said micro-sample by emitting the gas from said gas nozzle toward said micro-sample and simultaneously irradiating said charged particle beam in a state of fastening said probe and said micro-sample before and after a rotation operation of said probe performed by said rotation mechanism, and
wherein said contact detection unit detects electrical conduction between said micro-sample and said sample table.
7. A micro-sample processing observation method using a charged particle beam device having:
a charged particle source,
an objective lens configured to focus a charged particle beam emitted from said charged particle source onto a sample,
a detector configured to detect secondary charged particle to be emitted from said sample, a probe capable of coming into contact with said sample,
a gas nozzle configured to emit a conductive gas to said sample, and
a control unit configured to control driving of said probe and gas emission from said gas nozzle,
wherein said control unit has a contact detection unit,
wherein after having applied processing by irradiating the charged particle beam to said sample so as to separate a part of said sample as a micro-sample, a conductive film is formed on said micro-sample by emitting the gas from said gas nozzle toward said micro-sample and simultaneously irradiating said charged particle beam prior to fastening one surface of the micro-sample processed by said probe on a sample table, and
wherein said contact detection unit detects electrical conduction between said micro-sample and said sample table.
8. The micro-sample processing observation method according to claim 7 , wherein said control unit forms a conductive film on said micro-sample by emitting the gas from said gas nozzle toward said micro-sample and simultaneously irradiating said charged particle beam in a state of fastening said probe and said micro-sample before and after a rotation operation of said probe performed by said rotation mechanism, and
wherein said contact detection unit detects electrical conduction between said micro-sample and said sample table.