SUBSTRATE PROCESSING DEVICE
A substrate processing apparatus includes a substrate holding unit that holds a substrate in a horizontal position, a processing liquid supplying unit that supplies the processing liquid to the surface of the substrate held by the substrate holding unit, a substrate rotating unit that rotates the substrate held by the substrate holding unit, a heater that opposes the substrate held by the substrate holding unit, a heater supporting member that supports the heater independently of the substrate holding unit and a moving unit that moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate held by substrate holding unit approach/leave each other.
1 . A substrate processing apparatus that uses a processing liquid to process a substrate, the substrate processing apparatus comprising:
a substrate holding unit that holds the substrate;
a processing liquid supplying unit that supplies the processing liquid to a surface of the substrate held by the substrate holding unit;
a substrate rotating unit that rotates the substrate held by the substrate holding means unit;
a heater supporting member that supports a heater independently of the substrate holding unit and
a moving unit that moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate held by the substrate holding unit approach/leave each other.
2 . The substrate processing apparatus according to claim 1 ,
wherein the heater includes an opposing surface that is parallel to and opposite the substrate held by the substrate holding unit, and heats the substrate with radiation heat of the opposing surface, and
the opposing surface is divided into a plurality of opposing regions that can make amounts of heat generated per unit area differ from each other.
3 . The substrate processing apparatus according to claim 2 ,
wherein the amounts of heat generated per unit area in the plurality of opposing regions are set such that as the opposing regions extend away from a rotation axis by rotation of the substrate with the substrate rotating unit, the amounts are increased.
4 . The substrate processing apparatus according to claim 2 ,
wherein the plurality of opposing regions include a circular region with the rotation axis as a center and one or a plurality of annular regions that surround an outer circumference of the circular region.
5 . The substrate processing apparatus according to claim 4 ,
wherein at least one of the annular regions is divided into a plurality of divided regions in a circumferential direction, and
the plurality of divided regions are provided such that the divided regions can make the amounts of heat generated per unit area of the opposing surface differ from each other.
6 . The substrate processing apparatus according to claim 1 ,
wherein the substrate holding unit includes a plate-shaped base portion and a substrate supporting portion that is attached to the base portion and that supports the substrate while the substrate supporting portion is spaced apart from the base portion, and
the heater is disposed so as to be housed in a space partitioned by the base portion and the substrate supported by the substrate supporting portion.
7 . The substrate processing apparatus according to claim 6 ,
wherein the heater supporting member includes a support rod which is inserted through the base portion without contact with the base portion in a thickness direction and whose one end is coupled to the heater.
8 . The substrate processing apparatus according to claim 1 ,
wherein the processing liquid supplying unit selectively supplies plural kinds of the processing liquid to the surface of the substrate, and
the substrate processing apparatus further comprising a control portion that controls the moving unit so that the positional relationship between the substrate and the heater corresponds to the kind of the processing liquid supplied to the substrate.
9 . The substrate processing apparatus according to claim 8 ,
the control portion controls the heater so that an output level of the heater corresponds to the kind of the processing liquid supplied to the substrate.