Electronic component, process for producing same, sealing material paste, and filler particles
In an electronic component including two substrates at least one of which is transparent, an organic member arranged between these substrates, and a bonding portion located onto respective outer circumferential portions of the two substrates, this bonding portion includes a low-melting glass and filler particles. The low-melting glass includes vanadium oxide. The filler particles include a low thermally-expandable material, and an oxide containing a bivalent transition metal as a constituent element. The oxide is dispersed in the low thermally-expandable material, and the low thermally-expandable material has a thermal expansion coefficient of 5×10 −7 /° C. or less in a temperature range from 30 to 250° C. This invention makes it possible to heat the filler particles by irradiation with a laser to give the electronic component which is a component having a highly reliable bonding portion.
1. An electronic component comprising:
two substrates at least one of which is transparent;
an organic member arranged between these substrates; and
a bonding portion located onto respective outer circumferential portions of the two substrates,
wherein the bonding portion includes a low-melting glass and filler particles, the low-melting glass includes vanadium oxide, the filler particles include a low thermally-expandable material, and an oxide containing a bivalent transition metal as a constituent element, the oxide is dispersed in the low thermally-expandable material, and the low thermally-expandable material has a thermal expansion coefficient of 5×10-7/° C. or less in a temperature range from 30 to 250° C.
2. The electronic component according to claim 1 ,
wherein the bivalent transition metal is one or more selected from Mn, Fe, Co, Ni and Cu.
3. The electronic component according to claim 1 ,
wherein the oxide is one or more selected from MnWO4, FeWO4, CoWO4, NiWO4 and CuWO4.
4. The electronic component according to claim 1 ,
wherein the low thermally-expandable material is one or more selected from Zr2(WO4)(PO4)2, LiAISiO4, SiO2 and Mg2Al4Si5O18.
5. The electronic component according to claim 3 ,
wherein the low thermally-expandable material is Zr2(WO4)(PO4)2, and the content by percentage of the compound Zr2(WO4)(PO4)2 in the filler particles is from 80 to 98% by mass.
6. The electronic component according to claim 1 ,
wherein the low-melting glass is an oxide glass which contains V, Te, Fe and P, or an oxide glass which contains V, Ag and Te.
7. The electronic component according to claim 1 ,
wherein a content of the filler particles is from 10 to 100 parts by volume for 100 parts by volume of the low-melting glass.
8. A sealing material paste comprising:
filler particles that comprise a low thermally-expandable material and an oxide that includes a bivalent transition metal as a constituent element;
low-melting glass particles containing vanadium oxide; and
an organic solvent;
wherein the oxide is dispersed in the low thermally-expandable material, and the low thermally-expandable material has a thermal expansion coefficient of 5×10 −7 /° C. or less in a temperature range from 30 to 250° C.
9. The sealing material paste according to claim 8 ,
wherein the low-melting glass particles are an oxide glass containing V, Te, Fe and P.
10. The sealing material paste according to claim 9 ,
wherein the low-melting glass particles have a transition point of 350° C. or lower, and a softening point of 410° C. or lower.
11. The sealing material paste according to claim 8 ,
wherein the low-melting glass particles are an oxide glass containing V, Ag and Te.
12. The sealing material paste according to claim 11 ,
wherein the low-melting glass particles have a transition point of 240° C. or lower, and a softening point of 300° C. or lower.
13. The sealing material paste according to claim 8 ,
wherein a content of the filler particles is from 10 to 100 parts by volume for 100 parts by volume of the low-melting glass.
14. A process for producing an electronic component,
the electronic component comprising:
two substrates at least one of which is transparent;
an organic member arranged between these substrates; and
a bonding portion located onto respective outer circumferential portions of the two substrates,
the process comprising the steps of:
applying the sealing material paste recited in claim 8 to the outer circumferential portion of either one of the two substrates;
drying, or drying and firing the sealing material paste, thereby fixing the sealing material;
arranging the substrates to cause the sealing-material-fixed surface of the substrate to face and be in contact with a flat plane of the other substrate, and fixing the two substrates to each other; and
radiating a laser having a wavelength ranging from 400 to 1100 nm across the transparent substrate to the sealing material thereby rendering the sealing material the bonding portion.
15. The method for producing the electronic component according to claim 14 ,
wherein the firing is attained in a firing furnace, or by radiation of a laser having a wavelength ranging from 400 to 1100 nm.
16. The sealing material paste according to claim 8 ,
wherein the low thermally-expandable material includes LiAISiO4 and the bivalent transition metal is one or more selected from Mn, Fe, Co, Ni and Cu.
17. The sealing material paste according to claim 8 ,
wherein the oxide is one or more selected from MnWO4, FeWO4, CoWO4, NiWO4 and CuWO4.
18. The sealing material paste according to claim 8 ,
wherein the low thermally-expandable material further includes one or more selected from Zr2(WO4)(PO4)2, SiO2 and Mg2Al4Si5O18.
19. The sealing material paste according to claim 8 ,
wherein a percentage of the low thermally expandable material is from 80 to 98% by weight.