Semiconductor memory device including refresh operations having first and second cycles
Disclosed herein is a semiconductor device that includes: a memory cell array including a plurality of memory groups each having a plurality of memory cells, the memory groups being selected by mutually different addresses; a first control circuit periodically executing a refresh operation on the memory groups in response to a first refresh command; and a second control circuit setting a cycle of executing the refresh operation by the first control circuit. The second control circuit sets the cycle to a first cycle until executing the refresh operation to all the memory groups after receiving the first refresh command, and the second control circuit sets the cycle to a second cycle that is longer than the first cycle after executing the refresh operation to all the memory groups.
1. A semiconductor device comprising:
a memory cell array including a plurality of memory groups each having a plurality of memory cells, the memory groups being selected by mutually different addresses;
a temperature sensor configured to provide a temperature signal;
a first control circuit periodically executing a refresh operation on the memory groups in response to a first refresh command, the first control circuit including a first counter circuit configured to indicate an address of one of the memory groups that is a refresh operation target among the memory groups and including an oscillator circuit configured to generate a first refresh signal that is periodically activated in response to the first refresh command, the first control circuit further including a frequency divider circuit configured to generate a second refresh signal by dividing the first refresh signal based on the temperature signal, wherein the first counter circuit updates the address based on the second refresh signal; and
a second control circuit setting a cycle of executing the refresh operation by the first control circuit, wherein the second control circuit sets the cycle to a first cycle until executing the refresh operation to all the memory groups after receiving the first refresh command, and
the second control circuit sets the cycle to a second cycle that is longer than the first cycle after executing the refresh operation to all the memory groups.
2. The semiconductor device as claimed in claim 1 , wherein the second control circuit changes an activation cycle of the first refresh signal, thereby switching the cycle from the first cycle to the second cycle.
3. The semiconductor device as claimed in claim 2 , wherein
the oscillator circuit includes a plurality of logical gate circuits cyclically connected to each other, and
the second control circuit changes a driving capability of at least a part of the logical gate circuits, thereby switching the cycle from the first cycle to the second cycle.
4. The semiconductor device as claimed in claim 1 , wherein the first counter circuit updates the address every time a second refresh command that is different from the first refresh command is issued.
5. The semiconductor device as claimed in claim 1 , wherein the second control circuit includes a second counter circuit detecting that the address of the first counter circuit has completed one cycle after receiving the first refresh command.
6. The semiconductor device as claimed in claim 1 , wherein the second control circuit includes a determination circuit detecting that a predetermined bit of bits constituting the address indicated by the first counter circuit have been changed with a predetermined pattern after receiving the first refresh command.