IP Library Granted Patent US 9,281,470
Granted Patent B2
US 9,281,470 · App. 14/447,614 · Granted Mar 8, 2016

Plasma processing method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,281,470
App. No.
14/447,614
Granted
Mar 8, 2016
Kind
B2
Abstract

In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.

Claims (9)

1. A method of processing a laminate including a magnetic layer by using a plasma processing apparatus including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, the method comprising the steps of:

plasma-etching the laminate while applying a first radio-frequency voltage to the Faraday shield to form a plasma-etched laminate, and

forming a deposit layer on the plasma-etched laminate by plasma processing while applying a second radio-frequency voltage to the Faraday shield,

wherein the second radio-frequency voltage is higher than the first radio-frequency voltage.

2. The plasma processing method according to claim 1 , further comprising the step of:

performing plasma cleaning in the processing chamber between termination of the plasma-etching of the laminate and the formation of the deposit layer on the plasma-etched laminate.

3. The plasma processing method according to claim 1 , further comprising the step of:

taking out the sample from the processing chamber and plasma-cleaning an inside of the processing chamber after the formation of the deposit layer on the plasma-etched laminate.

4. The plasma processing method according to claim 1 , wherein the dielectric window is made of alumina.

Assignments (1)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →