IP Library Granted Patent US 9,090,455
Granted Patent B2
US 9,090,455 · App. 14/450,870 · Granted Jul 28, 2015

MEMS pressure transducer assembly

Inventors: Mark E. Schlarmann (Chandler, AZ); Yizhen Lin (Cohoes, NY)
Assignee: FREESCALE SEMICONDUCTOR, INC
B81B7/0048B81B3/0021B81B3/0072B81B7/0058B81C1/00309G01L9/0042G01L9/0052G01L19/147B81B2203/0118B81B2203/0127B81B2203/051B81B2207/115
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,090,455
App. No.
14/450,870
Granted
Jul 28, 2015
Kind
B2
Abstract

An assembly ( 20 ) includes a MEMS die ( 22 ) having a pressure transducer device ( 40 ) formed on a substrate ( 44 ) and a cap layer ( 38 ). A packaging process ( 74 ) entails forming the device ( 40 ) on the substrate, creating an aperture ( 70 ) through a back side ( 58 ) of the substrate underlying a diaphragm ( 46 ) of the device ( 40 ), and coupling a cap layer ( 38 ) to the front side of the substrate overlying the device. A trench ( 54 ) is produced extending through both the cap layer and the substrate, and the trench surrounds a cantilevered platform ( 48 ) at which the diaphragm resides. The MEMS die is suspended above a substrate ( 26 ) so that a clearance space ( 60 ) is formed between the cantilevered platform and the substrate. The diaphragm is exposed to an external environment ( 68 ) via the aperture, the clearance space, and an external port.

Claims (30)

1. An assembly comprising:

a device structure having a cantilevered platform formed therein, wherein a trench extends through said device structure surrounding said cantilevered platform;

a microelectromechanical systems (MEMS) device formed at a front side of said device structure, said MEMS device having an active region residing on said cantilevered platform, and an aperture extends through said device structure underlying said active region of said MEMS device; and

a cap layer coupled to said front side of said device structure overlying said MEMS device, wherein at least a portion of said cap layer is attached to said cantilevered platform to form a sealed cavity in which said active region is located.

2. The assembly of claim 1 wherein said MEMS device comprises a pressure transducer, said pressure transducer including a movable diaphragm in said active region, said movable diaphragm being exposed to an external environment via said aperture.

3. The assembly of claim 2 wherein said movable diaphragm is movable relative to said cantilevered platform.

4. The assembly of claim 1 wherein said cantilevered platform has a sole attachment point to said device structure surrounding said cantilevered platform.

5. The assembly of claim 1 further comprising a base substrate attached to a back side of said device structure such that a clearance space is formed between said cantilevered platform and said base substrate, said cantilevered platform being suspended above said base substrate.

6. The assembly of claim 5 further comprising an adhesive attaching said back side of said device structure to said base substrate, said adhesive having a thickness sufficient to produce said clearance space underlying said cantilevered platform.

7. The assembly of claim 5 wherein said trench additionally extends through said cap layer surrounding said cantilevered platform, said clearance space and said aperture are in communication with said trench, and said active region is exposed to an external environment via said trench, said clearance space, and said aperture.

8. The assembly of claim 7 further comprising a protective cap over said trench and said cap layer overlying said cantilevered platform, wherein said protective cap includes a port extending through said protective cap to expose said trench to said external environment.

9. The assembly of claim 5 wherein said base substrate includes a cutout in said base substrate to produce said clearance space.

10. The assembly of claim 9 wherein said cutout extends through an entirety of said base substrate so that said active region is exposed to an external environment via said cutout, said clearance space, and said aperture.

11. The assembly of claim 1 wherein said MEMS device includes conductive traces formed at said front side of said device structure, and said cap layer covers said conductive traces such that said conductive traces reside in said sealed cavity.

12. The assembly of claim 11 wherein said sealed cavity is sized to provide a gap between said cap layer and said conductive traces.

13. An assembly comprising:

a device structure having a cantilevered platform formed therein, wherein a trench extends through said device structure surrounding said cantilevered platform, and said cantilevered platform has a sole attachment point to said device structure surrounding said cantilevered platform;

a microelectromechanical systems (MEMS) device formed at a front side of said device structure, said MEMS device having an active region residing on said cantilevered platform, and an aperture extends through said device structure underlying said active region of said MEMS device, wherein said MEMS device comprises a pressure transducer, said pressure transducer including a movable diaphragm in said active region, said movable diaphragm being exposed to an external environment via said aperture; and

a cap layer coupled to said front side of said device structure overlying said MEMS device, wherein at least a portion of said cap layer is attached to said cantilevered platform to form a sealed cavity in which said movable diaphragm is located.

14. The assembly of claim 13 wherein said movable diaphragm is movable relative to said cantilevered platform.

15. The assembly of claim 13 wherein said MEMS device includes conductive traces formed at said front side of said device structure, and said cap layer covers said conductive traces such that said conductive traces reside in said sealed cavity.

16. The assembly of claim 15 wherein said sealed cavity is sized to provide a gap between said cap layer and said conductive traces.

17. An assembly comprising:

a device structure having a cantilevered platform formed therein, wherein a trench extends through said device structure surrounding said cantilevered platform;

a microelectromechanical systems (MEMS) device formed at a front side of said device structure, said MEMS device having an active region residing on said cantilevered platform, and an aperture extends through said device structure underlying said active region of said MEMS device;

a cap layer coupled to said front side of said device structure overlying said MEMS device, wherein said trench additionally extends through said cap layer surrounding said cantilevered platform, and at least a portion of said cap layer is attached to said cantilevered platform to form a sealed cavity in which said active region is located; and

a base structure attached to a back side of said device structure such that a clearance space is formed between said cantilevered platform and said base structure, said cantilevered platform being suspended above said base structure.

18. The assembly of claim 17 wherein said MEMS device comprises a pressure transducer, said pressure transducer including a movable diaphragm in said active region, said movable diaphragm being movable relative to said cantilevered platform, and said movable diaphragm being exposed to an external environment via said aperture.

19. The assembly of claim 17 wherein said clearance space and said aperture are in communication with said trench, and said active region is exposed to an external environment via said trench, said clearance space, and said aperture.

20. The assembly of claim 17 wherein said base structure includes a cutout extending through an entirety of said base structure so that said active region is exposed to an external environment via said cutout, said clearance space, and said aperture.

Assignments (25)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2026
From: NXP USA, INC.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 075045/0168 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0502 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 7, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037458/0460 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0921 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 4, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 034160/0351 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 4, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 034153/0027 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Nov 4, 2014
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 034160/0370 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2014
From: SCHLARMANN, MARK E.; LIN, YIZHEN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 033457/0548 →
Continuity (2)
Division 13400966 · Feb 21, 2012
Related Publication 20140339656A1 · Nov 20, 2014