EMI shield for high frequency layer transferred devices

1. A method for forming a semiconductor device comprising:

forming a radio frequency field effect transistor in an active layer of a semiconductor on insulator wafer, wherein the semiconductor on insulator wafer has a buried insulator side and an active layer side;

bonding a second wafer to the active layer side of the semiconductor on insulator wafer;

removing a substrate of the semiconductor on insulator wafer to expose surface of a buried insulator layer of the semiconductor on insulator wafer;

forming a shield layer for the semiconductor device to completely cover the exposed surface of the buried insulator layer, wherein the shield layer comprises an electrically conductive material;

coupling the radio frequency field effect transistor to a circuit comprising a radio frequency component; and

singulating the radio frequency field effect transistor, the radio frequency component, and the shield layer into a die.

2. The method of claim 1 , further comprising:

forming the radio frequency component on the buried insulator side of the semiconductor on insulator wafer after removing the substrate.

3. A method for forming a semiconductor device, comprising:

forming a radio frequency field effect transistor in an active layer of a semiconductor on insulator wafer, wherein the semiconductor on insulator wafer has a buried insulator side and an active layer side;

bonding a second wafer to the active layer side of the semiconductor on insulator wafer;

removing at least a portion of a substrate of the semiconductor on insulator wafer to expose at least a portion of a buried insulator layer of the semiconductor on insulator wafer;

forming a radio frequency component in a third wafer prior to bonding the third wafer to the buried insulator side of the semiconductor on insulator wafer after removing the portion of the substrate;

coupling the radio frequency field effect transistor to a circuit comprising the radio frequency component;

forming a shield layer for the semiconductor device on at least the exposed portion of the buried insulator layer, wherein the shield layer comprises an electrically conductive material; and

singulating the radio frequency field effect transistor, the radio frequency component, and the shield layer into a die.

4. The method of claim 3 , further comprising:

forming a radio frequency component cavity while removing the portion of the substrate;

wherein the radio frequency component utilizes the radio frequency component cavity; and

wherein the radio frequency component is an acoustic filter.

5. The method of claim 1 , further comprising:

coupling the shield layer to a second circuit comprising an active bias voltage generator;

wherein the active bias voltage generator provides a bias voltage to the shield layer that tracks a large signal bias signal provided to the radio frequency field effect transistor.

6. A method for forming a semiconductor device comprising:

forming a radio frequency field effect transistor in an active layer of a semiconductor on insulator wafer, wherein the semiconductor on insulator wafer has a buried insulator side and an active layer side;

bonding a second wafer to the active layer side of the semiconductor on insulator wafer;

removing at least a portion of a substrate of the semiconductor on insulator wafer to expose at least a portion of a buried insulator layer of the semiconductor on insulator wafer;

forming a shield layer for the semiconductor device on at least the exposed portion of the buried insulator layer and a remaining portion of the substrate of the semiconductor on insulator wafer, wherein the shield layer comprises a conductive material;

forming a radio frequency component on the buried insulator side of the semiconductor on insulator wafer after removing the portion of the substrate;

coupling the radio frequency field effect transistor to a circuit comprising the radio frequency component; and

singulating the radio frequency field effect transistor, the radio frequency component, and the shield layer into a die.

7. The method of claim 6 , further comprising:

coupling the shield layer to a second circuit comprising an active bias voltage generator;

wherein the active bias voltage generator provides a bias voltage to the shield layer that tracks a large signal bias signal provided to the radio frequency field effect transistor.

8. The method of claim 6 , wherein:

the radio frequency field effect transistor is coupled to the circuit via a metal conductor deposited in an excavated region of the buried insulator layer.

9. The method of claim 6 , wherein:

the shield layer has a mesh pattern.

10. A method for forming a semiconductor device, comprising:

forming a radio frequency field effect transistor in an active layer of a semiconductor on insulator wafer, wherein the semiconductor on insulator wafer has a buried insulator side and an active layer side;

bonding a second wafer to the active layer side of the semiconductor on insulator wafer;

removing at least a portion of a substrate of the semiconductor on insulator wafer to expose at least a portion of a buried insulator layer of the semiconductor on insulator wafer;

forming a shield layer for the semiconductor device on at least the exposed portion of the buried insulator layer, wherein the shield layer comprises an electrically conductive material;

coupling the radio frequency field effect transistor to a circuit comprising a radio frequency component; and

singulating the radio frequency field effect transistor, the radio frequency component, and the shield layer into a die,

wherein the shield layer is formed on a remaining portion of the substrate of the semiconductor on insulator wafer.

11. The method of claim 6 , wherein the shield layer is formed on a remaining portion of the substrate of the semiconductor on insulator wafer.