Colloidal nanocrystals and method of making
View Patent ↗A tight confinement nanocrystal comprises a homogeneous center region having a first composition and a smoothly varying region having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous center region to an outer surface of the nanocrystal. A method of producing the nanocrystal comprises forming a first solution by combining a solvent and at most two nanocrystal precursors; heating the first solution to a nucleation temperature; adding to the first solution, a second solution having a solvent, at least one additional and different precursor to form the homogeneous center region and at most an initial portion of the smoothly varying region; and lowering the solution temperature to a growth temperature to complete growth of the smoothly varying region.
1. A nanocrystal comprising:
a) a homogeneous region having a first composition; and
b) a smoothly varying region encompassing the homogeneous region and having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous region to an outer surface of the nanocrystal.
2. The nanocrystal of claim 1 wherein the confining potential barrier increases to its maximum closer to the surface of the homogeneous region than to the surface of the nanocrystal.
3. The nanocrystal of claim 1 wherein the smoothly varying region does not have any discontinuities in its radial profile.
4. The nanocrystal of claim 1 wherein the homogeneous region has a diameter between about 0.05 and about 0.15 Bohr radii and the smoothly varying region has thickness between about 0.05 and about 0.30 Bohr radii.
5. The nanocrystal of claim 1 wherein the homogeneous region consists of a single-component, binary or ternary semiconductor material of type IV, II-VI, III-V, IV-VI or a combination thereof.
6. The nanocrystal of claim 1 wherein the smoothly varying region consists of a binary, ternary or quaternary semiconductor material of type IV, II-VI, III-V or IV-VI or a combination thereof.
7. The nanocrystal of claim 1 further comprising:
c) at least one shell layer having a third composition formed around the outer surface of the smoothly varying region.
8. The nanocrystal of claim 7 wherein the at least one shell layer comprises a wider bandgap semiconductor material compared to that of the first composition and the second composition.
9. A nanocrystal comprising:
a) a homogeneous region having a first composition; and
b) a smoothly varying region encompassing the homogeneous region and having a second composition wherein a mole fraction of one or more varying elements monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous region to an outer surface of the nanocrystal.